Fluorescence Spectroscopy and Photochemistry of Poly(4-oxystyrenes) with Triphenylsulfonium Salts

Hacker, Nigel P.; Welsh, Kevin M.

doi:10.1021/ba-1993-0236.ch021

Cited by 15 publications

(14 citation statements)

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“…4) Acid generators are also sensitized through the energy or electron transfer from the excited state of polymer molecules. 21,22) The sum of acid yields generated through direct electronic excitation and energy or electron transfer has been roughly estimated to be 2-8% of the total acid yield generated in PHS films with 10 wt % TPS-tf. 23) The probability of acid generation through electronic excitation obviously depends on the acid generator concentration.…”

mentioning

confidence: 99%

Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation

Kozawa

Tagawa

2011

Jpn. J. Appl. Phys.

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It is known that the chemical yield generated upon exposure to an ionizing radiation strongly depends on the thermalization distance of the electrons ejected through ionization. In this study, the acid yield upon exposure to extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, was analyzed using a Monte Calro simulation of radiation-induced reactions. The thermalization distance in poly(4-hydroxystyrene), which is a typical backbone polymer of chemically amplified resists used for an ionizing radiation, was determined to be 3.2 ±0.6 nm. The reaction radius for the dissociative electron attachment to triphenylsulfonium triflate was also determined to be 0.70 ±0.08 nm.

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confidence: 99%

Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation

Kozawa

Tagawa

2011

Jpn. J. Appl. Phys.

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“…In the resists for KrF lithography, acid generators are also sensitized through energy or electron transfer from the excited states of polymers. 15) However, the initial acid distribution approximately corresponds to the aerial image of incident radiation in ArF and KrF resists because the direct excitation is the main process for acid generation. In EUV resists, photoelectrons are emitted after EUV absorption.…”

Section: Iðx; Y; 0þmentioning

confidence: 99%

Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists

Kozawa

Tagawa

Santillan³

et al. 2008

jjap

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The resolution of chemically amplified extreme ultraviolet (EUV) resists has reached sub-30 nm. However, the sensitivity and the reduction in the line edge roughness of such resists is still inadequate for the realization of EUV lithography. The pattern formation of chemically amplified resists is based on chemical reactions, which start with energy deposition from exposure tools and are terminated by quenchers or by cutting the heat supply for chemical reactions. In this study, the effects of rate constant for deprotection on latent image formation in chemically amplified EUV resists were investigated from the viewpoint of the difference between high-and low-activation-energy (E a )-type resists. In chemically amplified resists, neutralization and deprotection competitively proceed. In high-E a -type resists, in which neutralization proceeds before deprotection, the contrast of pattern edges is improved by suppressing deprotection in the low-dose region. In low-E a -type resists, in which a fast deprotection is expected, the difference in the extent of deprotection between the high-and low-dose regions can be enhanced by promoting deprotection over neutralization. For the improvement in high-or low-E a -resist performance, it is effective to enhance or balance all advantages of chemical reactions.

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“…In chemically amplified vacuum UV (VUV) resists, acid generators are mainly sensitized through the direct excitation of electronic states. 5) The acid yield per exposure dose decreases during exposure because of the decomposition of acid generators. 6) The nonlinear response of acid yield to exposure dose can be utilized to improve the EL of VUV resists because acid generator concentration can be kept low in VUV resists.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of Exposure Latitude of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Kozawa¹,

Tagawa²

2011

Jpn. J. Appl. Phys.

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Boronization of the vacuum chamber of the L-2M stellarator has resulted in modification of the electron temperature profile. In particular, a welldefined jump in the electron temperature to T e ∼ 100 eV in a narrow region r/r ∼ 0.05 is observed in the temperature profile at the plasma edge. In the present paper, the value and shape of the jump in T e are studied at different values of plasma parameters and ECR heating power. A jump in T e is absent at a power of P ∼ 100 kW, whereas at P ∼ 200 kW the electron temperature drops from 150 eV to zero within r ∼ 0.5 cm. The value of threshold power for the formation of a jump in T e at n e ∼ 1.7 × 10 19 m −3 lies within the range P ∼100-160 kW. In terms of power per particle this power threshold is P /V /N e ∼ 0.2-0.3 Mw/m 3 /10 19 m −3 , the value of which coincides with threshold power for ETB formation found recently in the CHS stellarator. When the helical-field strength is 25% or 50% below its standard value, a jump in T e at the plasma edge in L-2M is absent.

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Fluorescence Spectroscopy and Photochemistry of Poly(4-oxystyrenes) with Triphenylsulfonium Salts

Cited by 15 publications

References 0 publications

Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation

Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation

Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists

Theoretical Study of Exposure Latitude of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

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