Heteroatom doping is regarded as a promising method for
controlling
the optoelectronic properties of carbon nanodots (CNDs), notably their
fluorescence and antioxidation activities. In this study, phosphorous
(P) and boron (B) are doped at different quantities in the CNDs’
structures to investigate their effects on the optical and antioxidation
properties. Both the dopants can enhance light absorption and fluorescence,
yet via different approaches. After doping, the UV–vis absorption
of high P%-CNDs demonstrated a slight blue shift (348–345 nm),
while the high B%-CNDs showed a minor red shift (348–351 nm),
respectively. The fluorescence emission wavelength of doped CNDs changes
marginally while the intensity increases significantly. Structural
and composition characterizations show elevated levels of C=O
on the surface of high P%-CND compared to low P%-CNDs. In B-doped
CNDs, more NO
3
–
functional groups and
O–C=O bonds and fewer C–C bonds form at the surface
of high B%-CNDs compared to the low B%-CNDs. A radical scavenging
study using 2,2-diphenyl-1-picrylhydrazyl (DPPH) was carried out for
all CNDs. It was found that the high B%-CNDs exhibited the highest
scavenging capacity. The effects of the atomic properties of dopants
and the resulting structures of CNDs, including atomic radius, electronegativity,
and bond lengths with carbon, on the optoelectronic property and antioxidative
reactions of CNDs are comprehensively discussed. It suggests that
the effect of P-doping has a major impact on the carbogenic core structure
of the CNDs, while the B-doping mainly impacts the surface functionalities.