Fluoride-free synthesis strategy for luminescent InP cores and effective shelling processes via combinational precursor chemistry

Shin, Seungki; Gwak, Namyoung; Yoo, Hyeri; Jang, Hyunwoo; Lee, Minwoo; Kyungwan, Kang; Kim, Seongchan; Yeon, Sooyeon; Kim, Tae Ann; Kim, Sangtae; Hwang, Gyu Weon

doi:10.1016/j.cej.2023.143223

Cited by 8 publications

(2 citation statements)

References 58 publications

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“…The absorption spectra showed that the etched NPLs and treated NPLs possessed higher valley/peak ratios compared to the pristine NPLs, implying high size uniformity. 45 This observation is also verified from the FWHM of the PL spectra, which changed from 42 nm for the pristine NPLs to 23 nm and 22 nm etched and treated counterparts, respectively. This indicates that the surface modification strategy of DDDAm assisted by HI in situ etching can achieve CsPbI 3 NPLs with a high PL QY.…”

Section: Resultssupporting

confidence: 55%

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI₃nanoplatelets by hydroiodic acid-assisted ligand treatment

Li,

Song,

Cao

et al. 2024

Inorg. Chem. Front.

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Section: Resultssupporting

confidence: 55%

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI₃nanoplatelets by hydroiodic acid-assisted ligand treatment

Li,

Song,

Cao

et al. 2024

Inorg. Chem. Front.

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“…QD displays [1][2][3][4][5][6][7][8][9][10]. By changing size, their spectra can cover the entire visible region.…”

Section: Introductionmentioning

confidence: 99%

High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Cheng,

Li,

Chen

et al. 2024

Mater. Futures

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The performance of red InP and blue ZnTeSe-based quantum dots (QDs) and corresponding QD light emitting diodes (QLEDs) has already been improved significantly, whose external quantum efficiencies (EQEs) and luminances have exceeded 20% and 80,000 cd m-2, respectively. However, the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology. The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield (PL QY) of the InP-based core/shell quantum dots (QDs), limiting the performance of the relevant QLEDs. Here, we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores, in which zinc myristate reacted with phosphine dangling bonds to form Zn-P protective layer and protect InP cores from the water and oxygen in the environment. The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%. The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%, along with a luminance of over 175,000 cd m-2 and a long T50@100 cd m-2 lifetime of over 20,000 h.

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Highly Luminescent Shell‐Less Indium Phosphide Quantum Dots Enabled by Atomistically Tailored Surface States

Gwak,

Shin,

Yoo

et al. 2024

Advanced Materials

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Contrary to the prevailing notion that shell structures arise from the intricate chemistry and surface defects of InP quantum dots (QDs), an innovative strategy that remarkably enhances the luminescence efficiency of core‐only InP QDs to over 90% is introduced. This paradigm shift is achieved through the concurrent utilization of group 2 and 3 metal‐derived ligands, providing an effective remedy for surface defects and facilitating charge recombination. Specifically, a combination of Zn carboxylate and Ga chloride is employed to address the undercoordination issues associated with In and P atoms, leading to the alleviation of in‐gap trap states. The intricate interplay and proportional ratio between Ga‐ and Zn‐containing ligands play pivotal roles in attaining record‐high luminescence efficiency in core‐only InP QDs, as successfully demonstrated across various sizes and color emissions. Moreover, the fabrication of electroluminescent devices relying solely on InP core emission opens a new direction in optoelectronics, demonstrating the potential of the approach not only in optoelectronic applications but also in catalysis or energy conversion by charge transfer.

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Fluoride-free synthesis strategy for luminescent InP cores and effective shelling processes via combinational precursor chemistry

Cited by 8 publications

References 58 publications

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI₃nanoplatelets by hydroiodic acid-assisted ligand treatment

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI₃nanoplatelets by hydroiodic acid-assisted ligand treatment

High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Highly Luminescent Shell‐Less Indium Phosphide Quantum Dots Enabled by Atomistically Tailored Surface States

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Fluoride-free synthesis strategy for luminescent InP cores and effective shelling processes via combinational precursor chemistry

Cited by 8 publications

References 58 publications

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI3nanoplatelets by hydroiodic acid-assisted ligand treatment

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI3nanoplatelets by hydroiodic acid-assisted ligand treatment

High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Highly Luminescent Shell‐Less Indium Phosphide Quantum Dots Enabled by Atomistically Tailored Surface States

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Product

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Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI₃nanoplatelets by hydroiodic acid-assisted ligand treatment

Achieving a near-unity photoluminescence quantum yield and high stability of CsPbI₃nanoplatelets by hydroiodic acid-assisted ligand treatment