Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review

Efficient Visible‐Light Emission from Si/CaF2 (111) Heterostructures Grown by Molecular Beam Epitaxy

“…It is well known that CaF, grows in a two-dimensional (2D) way on Si(ll1) for substrate temperatures ranging from 300 to 800 "C [2]. We found that Si, on the other hand, has a strong tendency to form large 3D islands when deposited in these same conditions on CaF,.…”

“…Calcium fluoride was chosen as the barrier material for the Si quantum wells, as it is a large band-gap ( NN 12 eV) insulator. Moreover this material can be grown epitaxially on Si, due to the small lattice mismatch of 0.6% at room temperature, for a recent review, see [2]. The deposition was performed in an ultrahigh vacuum (UHV) chamber (base pressure & lo-* Pa), equipped with a reflection high energy electron diffraction (RHEED) facility, and connected, under UHV, to a surface analysis chamber with an Auger electron spectrometer (AES).…”

Formation of anodic layers on InAs (111)III. Study of the chemical composition

“…Despite the progress that has been achieved in technology for the passivation of the surface of III-V semiconductors, the mechanism for the formation of an ideal interface has not been unambiguously estab lished so far. Progress in technology for the production of microelectronic devices on the basis of metal-insu lator-semiconductor (MIS) structures based on III-V binary compounds and chemically inert insula tors (SiO 2 , Si 3 N 4 ) is achieved via passivation of the semiconductor surface by various methods [1][2][3][4]; these provide a reduction in the density of SSs at the insulator/(III-V semiconductor) interface. Specifi cally, a thin (15 nm) fluorinated anodic layer (FAL) on the InAs (111)III surface provides a density of states in In 2 O 3 /SiO 2 /InAs(111)III MIS structures at a level lower than 5 × 10 10 cm -2 eV -1 .…”

Synchrotron spectroscopy of confined carriers in CdF2-CaF2 superlattices

“…Typically, these works are motivated by the interesting and often unique optical properties which can be obtained, leading to applications in spintronics or lasers for example. By contrast, interest in very thin heterostructures comprised of alternating layers of insulating dielectric materials (such as CaF 2 ) has been far more recent (dating from the 1990s [6][7][8][9] ) and made possible by the progress in nanofabrication achieved by researchers working on inorganic semiconductor materials.…”