Fluorinated–chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4

Alonso, Juan Carlos; Pichardo, E.; Rodrı́guez-Fernández, L.; Cheang-Wong, J.C.; Ortíz, A.

doi:10.1116/1.1349199

Cited by 15 publications

(6 citation statements)

References 52 publications

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“…Many researchers have investigated various kinds of organic, inorganic, and hybrid materials as alternatives to the conventional interlayer dielectric film of SiO 2 ͑k = 4.0͒. [1][2][3][4][5][6] Furthermore, porous materials have been intensively investigated as ultralow k materials for next generation ULSIs. 7 Many serious problems occur when low-k films are used as insulating materials for ULSIs.…”

Section: Introductionmentioning

confidence: 99%

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Uchida

Takashima

Hori

et al. 2008

Journal of Applied Physics

137

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Low dielectric constant (low-k) films have been widely used as insulating materials in ultra-large-scale integrated circuits. Low-k films receive heavy damage during the plasma processes of etching or ashing, resulting in an increase in their dielectric constant. In order to realize damage-free plasma processes for low-k films, it is essential to determine the influence of radiation, radicals, and ions emitted in the plasma process on the characteristics of low-k films. We have developed a technique to evaluate the influence of radiation, radicals, ions, and their synergies on films in real plasma processes and have named it pallet for plasma evaluation (PAPE). Using the PAPE, plasma-induced damage on porous SiOCH films were investigated in dual-frequency capacitively coupled H2∕N2 plasmas. The damage was characterized by ellipsometry, Fourier-transform infrared spectroscopy, and thermal desorption spectroscopy. On the basis of the results, the damage mechanisms associated with vacuum ultraviolet (VUV) and UV radiation, radicals, and ions were clarified. The damage was caused not only by ions and radicals but also by VUV and UV radiation emitted by the plasmas. Moreover, it was found that the synergy between the radiation and the radicals enhanced the damage.

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Section: Introductionmentioning

confidence: 99%

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Uchida

Takashima

Hori

et al. 2008

Journal of Applied Physics

137

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“…SiCl 4 /O 2 ‐based plasmas are suitable for introducing SiO 2 ‐like coatings with good chemical and electrical integrity through plasma enhanced chemical vapor deposition (PECVD) . It has been shown that chlorine‐containing gases can be very effective for removing impurities from the reactor walls and for improving the overall chemical and electrical stability of the deposited SiO 2 layer . The basic mechanism of deposition can be summarized as follows: (i) SiCl 4 dissociates in the plasma into low‐ or non‐volatile products (SiCl 0–3 ) which are the precursor molecules/atoms for deposition.…”

Section: Introductionmentioning

confidence: 99%

“…The basic mechanism of deposition can be summarized as follows: (i) SiCl 4 dissociates in the plasma into low‐ or non‐volatile products (SiCl 0–3 ) which are the precursor molecules/atoms for deposition. (ii) O 2 and O oxidize the deposited SiCl x ‐layer to a SiO 2 ‐like layer . In addition, the only byproduct is Cl, which can remove H impurities from the SiO 2 layer through formation of HCl …”

Section: Introductionmentioning

confidence: 99%

“…Several authors have reported on SiO 2 film deposition at low substrate temperature by PECVD using SiCl 4 /O 2 plasmas. Alonso et al have experimentally investigated the deposition rate and structural properties of the SiO 2 layer deposited from different SiCl 4 /SiF 4 /O 2 mixtures with ellipsometry, etch rate measurements, and infrared spectroscopy. Ortiz et al have also used infrared transmittance, Auger electron spectroscopy, ellipsometry, and etch rate measurements to characterize the SiO 2 films deposited through PECVD using SiCl 4 and O 2 .…”

Section: Introductionmentioning

confidence: 99%

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Numerical Investigation of SiO₂ Coating Deposition in Wafer Processing Reactors with SiCl₄/O₂/Ar Inductively Coupled Plasmas

Tinck

Schepper

Bogaerts

2013

Plasma Processes & Polymers

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Simulations and experiments are performed to obtain a better insight in the plasma enhanced chemical vapor deposition process of SiO2 by SiCl4/O2/Ar plasmas for introducing a SiO2‐like coating in wafer processing reactors. Reaction sets describing the plasma and surface chemistry of the SiCl4/O2/Ar mixture are presented. Typical calculation results include the bulk plasma characteristics, i.e., electrical properties, species densities, and information on important production and loss processes, as well as the chemical composition of the deposited coating, and the thickness uniformity of the film on all reactor surfaces. The film deposition characteristics, and the trends for varying discharge conditions, are explained based on the plasma behavior, as calculated by the model.

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“…In this model, the plasma enhanced chemical vapor deposition (PECVD) process of SiO 2 with an Ar/SiCl 4 /O 2 inductively coupled plasma (ICP) is considered. SiCl 4 /O 2 is a proper gas mixture for depositing SiO 2 ‐like films with good overall properties . SiCl 4 dissociates in the plasma into non‐volatile products (SiCl 0–3 ) which are the precursors for the deposition, while O 2 and O oxidize the deposited layer and convert it to SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Formation of a Nanoscale SiO₂Capping Layer on Photoresist Lines with an Ar/SiCl₄/O₂Inductively Coupled Plasma: A Modeling Investigation

Tinck

Altamirano-Sánchez

Schepper

et al. 2013

Plasma Process. Polym.

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PECVD of a nanoscale SiO 2 capping layer using low pressure SiCl 4 /O 2 /Ar plasmas is numerically investigated. The purpose of this capping layer is to restore photoresist profiles with improved line edge roughness. A 2D plasma and Monte Carlo feature profile model are applied for this purpose. The deposited films are calculated for various operating conditions to obtain a layer with desired shape. An increase in pressure results in more isotropic deposition with a higher deposition rate, while a higher power creates a more anisotropic process. Dilution of the gas mixture with Ar does not result in an identical capping layer shape with a thickness linearly correlated to the dilution. Finally, a substrate bias seems to allow proper control of the vertical deposition rate versus sidewall deposition as desired.

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Fluorinated–chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4

Abstract: Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using Si F 4 ∕ N 2 ∕ H 2 mixtures

Cited by 15 publications

References 52 publications

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Numerical Investigation of SiO₂ Coating Deposition in Wafer Processing Reactors with SiCl₄/O₂/Ar Inductively Coupled Plasmas

Formation of a Nanoscale SiO₂Capping Layer on Photoresist Lines with an Ar/SiCl₄/O₂Inductively Coupled Plasma: A Modeling Investigation

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Fluorinated–chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4

Abstract: Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using Si F 4 ∕ N 2 ∕ H 2 mixtures

Cited by 15 publications

References 52 publications

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4/O2/Ar Inductively Coupled Plasmas

Formation of a Nanoscale SiO2Capping Layer on Photoresist Lines with an Ar/SiCl4/O2Inductively Coupled Plasma: A Modeling Investigation

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Product

Resources

About

Numerical Investigation of SiO₂ Coating Deposition in Wafer Processing Reactors with SiCl₄/O₂/Ar Inductively Coupled Plasmas

Formation of a Nanoscale SiO₂Capping Layer on Photoresist Lines with an Ar/SiCl₄/O₂Inductively Coupled Plasma: A Modeling Investigation