Fluorinated Graphene Contacts and Passivation Layer for MoS₂ Field Effect Transistors (Adv. Electron. Mater. 10/2022)

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

“…Applications of 2D FETs using plasma and gas etching techniques. a) Fabrication process for recessed-channel WSe 2 FETs by UV-ozone oxidation and KOH etching; [101] b) Cross-sectional TEM images of before and after etching process for oxidized WSe 2 ; [101] c) Schematic for short-channel WSe 2 FET formed by e-beam irradiation and its transfer characteristics; [102] d) Schematic and optical images of graphene-passivated MoS 2 (G-MoS 2 ) FET before and after XeF 2 gas exposure; [103] e) Transfer characteristics of G-MoS 2 FETs before and after fluorination process; [103] f) Band diagrams and transfer characteristics of untreated and Ar plasma-treated WSe 2 at the contact; [86] g) Thickness control of BP FET by Ar plasma treatment; [104] h) Etched BP thickness as a function of duration of plasma treatment; [104] Transfer characteristics, mobility, and on/off ratio of BP FET before and after plasma treatment. [104] Figures adapted with permission from: a,b) ref.…”

“…[102], Copyright 2022, Wiley Publishing Group, d,e) ref. [103], Copyright 2022, Wiley Publishing Group, f) ref. [86], Copyright 2021, Wiley Publishing Group, g-i) ref.…”

“…Ryu et al developed a unique etching technique that selectively etched hBN in graphene-hBN heterostructures using XeF 2 gas exposure. [103] Graphene was fluorinated by gas exposure and served as an etch stop layer against further etching. Such strong etch selectivity between hBN and graphene enabled the formation of a fluorinated graphene (FG) interlayer on the MoS 2 FETs, as illustrated in Figure 7d.…”