Tin
oxide (SnO2) is the most commonly used electron
transport material for perovskite solar cells (PSCs). Various techniques
have been applied to deposit tin dioxide, including spin-coating,
chemical bath deposition, and magnetron sputtering. Among them, magnetron
sputtering is one of the most mature industrial deposition techniques.
However, PSCs based on magnetron-sputtered tin oxide (sp-SnO2) have a lower open-circuit voltage (V
oc) and power conversion efficiency (PCE) than those prepared by the
mainstream solution method. This is mainly due to the oxygen-related
defects at the sp-SnO2/perovskite interface, and traditional
passivation strategies usually have little effect on them. Herein,
we successfully isolate the oxygen adsorption (Oads) defects
located on the surface of sp-SnO2 from the perovskite layer
using a PCBM double-electron transport layer. This isolation strategy
effectively suppresses the Shockley-Read-Hall recombination at the
sp-SnO2/perovskite interface, which results in an increase
in the V
oc from 0.93 to 1.15 V and an
increase in PCE from 16.66 to 21.65%. To our knowledge, this is the
highest PCE achieved using a magnetron-sputtered charge transport
layer to date. The unencapsulated devices maintain 92% of their initial
PCE after storage in air with a relative humidity of 30–50%
after 750 h. We further use the solar cell capacitance simulator (1D-SCAPS)
to confirm the effectiveness of the isolation strategy. This work
highlights the application prospect of magnetron sputtering in the
field of perovskite solar cells and provides a simple yet effective
way to tackle the interfacial defect issue.