Fluoropolymer Resists: Fundamentals and Lithographic Evaluation

Itô, Hiroshi; Truong, Hoa D.; Rhodes, Larry F.; Chang, Chun Yen; Langsdorf, Leah J.; Sidaway, H. A.; Maeda, Kengo; Sumida, Seizo

doi:10.2494/photopolymer.17.609

Cited by 21 publications

(14 citation statements)

References 26 publications

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“…Apparently, for poly(2) the endo/exo ratio is not the determining factor as was reported by Ito,et al for poly(1) [8].…”

Section: R H H Nmentioning

confidence: 48%

“…The properties of poly(norbornene) can be affected by the ratio of isomers as well. In particular, Ito, et al, found that the dissolution rate of poly (1) in TMAH developer is controlled by the isomer ratio [8] In this contribution, we report that optical density of poly-2 depends on the monomer isomer ratio. Exo and endo-2 were prepared based according to the literature [9].…”

Section: Methodsmentioning

confidence: 67%

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The Effect of endo/exo-Norbornene Isomer Ratio on Poly(norbornene) Optical Density at 193 nm

Chang

Bell

Shick

et al. 2014

J. Photopol. Sci. Technol.

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The polymerization of exo- [(norbornenemethoxy)methyl]-1,1,1,3,3,3-hexafluoro-2-propanol (2) using a palladium catalyst gave a significantly higher M w polymer than the endo isomer or the 80/20 mixture of endo/exo-2. To achieve similar M w higher concentrations of formic acid chain transfer agent was needed for the exo isomer than for the 80/20 mixture. As a result, the optical density at 193 nm of the exo isomer polymer is substantially lower since less olefinic polymer end groups were formed. A subtle interplay between chain transfer mechanisms and propagation rates explains the results obtained. Isomer content in poly(2) does not affect the dissolution rate in TMAH.

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“…Apparently, for poly(2) the endo/exo ratio is not the determining factor as was reported by Ito,et al for poly(1) [8].…”

Section: R H H Nmentioning

confidence: 48%

Section: Methodsmentioning

confidence: 67%

The Effect of endo/exo-Norbornene Isomer Ratio on Poly(norbornene) Optical Density at 193 nm

Chang

Bell

Shick

et al. 2014

J. Photopol. Sci. Technol.

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“…Unfortunately, the exo / endo isomer content was not determined for the current batch of PNBHFA. As the present study progressed, the importance of the isomer effect was reported 6 . Neutron reflectivity was performed on the NG 7 reflectometer at the NIST Center for Neutron Research.…”

Section: Methodsmentioning

confidence: 84%

Interfacial structure of photoresist thin films in developer solutions

Prabhu

Vogt

et al. 2005

SPIE Proceedings

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A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.

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“…Replacing carboxylic acid with HFA offers several advantages such as high optical transparency, reduction of swelling, good lithographic performance [4] , etc. The endo/exo ratio in PNBHFA was shown to have a big impact on the dissolution kinetics [5] . From their imaging studies, Ito and coworkers showed that higher resolution was achieved for exo-enriched PNBHFA.…”

Section: Dissolution Inhibitor Approachmentioning

confidence: 99%

Alternatives to chemical amplification for 193nm lithography

et al. 2010

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Research has been conducted to develop alternatives to chemically amplified 193 nm photoresist materials that will be able to achieve the requirements associated with sub-32 nm device technology. New as well as older photoresist design concepts for non-chemically amplified 193 nm photoresists that have the potential to enable improvements in line edge roughness while maintaining adequate sensitivity, base solubility, and dry etch resistance for high volume manufacturing are being explored. The particular platforms that have been explored in this work include dissolution inhibitor photoresist systems, chain scissioning polymers, and photoresist systems based on polymers incorporating formyloxyphenyl functional groups. In studies of two-component acidic polymer/dissolution inhibitor systems, it was found that compositions using ortho-nitrobenzyl cholate (NBC) as the dissolution inhibitor and poly norbornene hexafluoro alcohol (PNBHFA) as the base resin are capable of printing 90 nm dense line/space patterns upon exposure to a 193 nm laser. Studies of chain scission enhancement in methylmethacrylate copolymers showed that incorporating small amounts of absorptive a-cleavage monomers significantly enhanced sensitivity with an acceptable increase in absorbance at 193 nm. Specifically, it was found that adding 3 mol% of α-methyl styrene (α-MS) reduced the dose to clear of PMMA-based resist from 1400 mJ/cm 2 to 420 mJ/cm 2 . Preliminary data are also presented on a direct photoreactive design concept based on the photo-Fries reaction of formyloxyphenyl functional groups in acrylic copolymers.

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Fluoropolymer Resists: Fundamentals and Lithographic Evaluation

Cited by 21 publications

References 26 publications

The Effect of endo/exo-Norbornene Isomer Ratio on Poly(norbornene) Optical Density at 193 nm

The Effect of endo/exo-Norbornene Isomer Ratio on Poly(norbornene) Optical Density at 193 nm

Interfacial structure of photoresist thin films in developer solutions

Alternatives to chemical amplification for 193nm lithography

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