Flux measurements in a nuclear research reactor by using an aluminum nitride detector

Moon, Byungsoo; Yoo, Do-Sik; Hwang, In-Koo; Chung, C.E.; Holcomb, David Eugene

doi:10.1016/j.nimb.2007.04.285

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…This work reports GaN for intrinsic neutron detection through the 14 N(n, p) reaction, which could replace the expensive conversion layers. A polycrystalline Aluminum Nitride (AlN) resistive neutron detector utilizing the 14 N(n, p) reaction has been previously reported and was shown to scale linearly with reactor power 15 . There are few studies for GaN-based intrinsic neutron detectors 16 , typically due to the small cross-section for 14 N(n, p) thermal neutron reaction, Fig.…”

Section: Introductionmentioning

confidence: 99%

Neutron detection performance of gallium nitride based semiconductors

Zhou

Melton

Burgett

et al. 2019

Sci Rep

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Neutron detection is crucial for particle physics experiments, nuclear power, space and international security. Solid state neutron detectors are of great interest due to their superior mechanical robustness, smaller size and lower voltage operation compared to gas detectors. Gallium nitride (GaN), a mature wide bandgap optoelectronic and electronic semiconductor, is attracting research interest for neutron detection due to its radiation hardness and thermal stability. This work investigated thermal neutron scintillation detectors composed of GaN thin films with and without conversion layers or rare-earth doping. Intrinsic GaN-based neutron scintillators are demonstrated via the intrinsic 14N(n, p) reaction, which has a small thermal neutron cross-section at low neutron energies, but is comparable to other reactions at high neutron energies (>1 MeV). Gamma discrimination is shown to be possible with pulse-height in intrinsic GaN-based scintillation detectors. Additionally, GaN-based scintillation detector with a 6LiF neutron conversion layer and Gd-doped GaN detector are compared with intrinsic GaN detectors. These results indicate GaN scintillator is a suitable candidate neutron detector in high-flux applications.

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Section: Introductionmentioning

confidence: 99%

Neutron detection performance of gallium nitride based semiconductors

Zhou

Melton

Burgett

et al. 2019

Sci Rep

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“…We counted about 960 pulses/sec on the average for this flux when using a detector of 3 mm × 3 mm × 0.635 mm in size. The response of the aluminum nitride to the changes in the neutron flux intensities was studied [6] inside the cold neutron source hole (CNS hole) of the Hanaro research reactor at the Korea Atomic Energy Research Institute. The neutron flux inside the hole was about 0.6 × 10 15 /cm 2 • sec during its full power operation.…”

Section: Introductionmentioning

confidence: 99%

Measurement of a 2-MeV Electron Beam Flux by Using an Aluminum-Nitride Detector

Moon

Hahn²,

Yoo³

et al. 2007

JKPS

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A small aluminum-nitride detector of 3 mm × 3 mm × 0.387 mm in size fabricated at the Oak Ridge National Laboratory is used to measure the 1 MeV ∼ 2 MeV electron beam from a beam facility at the Korea Atomic Energy Research Institute. Our objective is to check the linearity of the generated electric current relative to the electron beam intensity and to see if the electric current generated can be used as a measurement of the flux intensity. The results show that if the electric voltage applied to the detector is 2,000 V or higher and if the data are taken in a sufficiently short period of time so that the heat build up inside the detector is negligible, then the measured electric current increases linearly as the flux intensity increases. Hence, the measured value can be used as an estimate of the flux intensity, provided that one prior measurement of the beam with the given energy is available.

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Measurement of some K and L X-rays parameters of halogen iodine compounds

Durdu

Küçükönder

2014

Radiation Physics and Chemistry

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Flux measurements in a nuclear research reactor by using an aluminum nitride detector

Cited by 3 publications

References 5 publications

Neutron detection performance of gallium nitride based semiconductors

Neutron detection performance of gallium nitride based semiconductors

Measurement of a 2-MeV Electron Beam Flux by Using an Aluminum-Nitride Detector

Measurement of some K and L X-rays parameters of halogen iodine compounds

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