Fluxless bonding of Si chips to aluminum boards using electroplated Sn solder

Hsu, Shou-Jen; Sha, Chu-Hsuan; Lee, Chin C.

doi:10.1007/s10854-014-2014-z

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…We, thus, embarked on finding an alternative design and came up with an idea of utilizing an Sn/Fe binary system for bonding without adding the Ni buffer layer. Based on the Sn-Fe binary phase diagram (Hsu et al, 2014), FeSn and FeSn 2 are two stable IMCs at room temperature. However, studies on interfacial reactions between Fe and Sn-based alloys have shown that FeSn 2 is the only IMC observed at the interface (Kim et al, 1999;Shen et al, 2009).…”

Section: Introductionmentioning

confidence: 99%

Bonding of Si chips to low carbon steel boards using electroplated Sn solder

Hsu

Lee

2018

SSMT

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Access to this document was granted through an Emerald subscription provided by emerald-srm:203677 [] For AuthorsIf you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this research was to develop a new process to bond silicon (Si) chips to low carbon steel substrates using pure tin (Sn) without any flux. Design/methodology/approach -Iron (Fe) substrates were first electroplated with a Sn layer, followed by a thin silver (Ag) layer that inhibits Sn oxidation thereafter. It is this Ag capping layer that makes the fluxless feature possible. Fluxless processes are more environmentally friendly and more likely to produce joints without voids. The Si chips were deposited with Cr/Au dual layer structure. The bonding process was performed at 240°C in vacuum. The Sn joint thickness was controlled by spacers during the bonding. Scanning electron microscopy images on cross sections exhibited quality joints without visible voids. Energy dispersive X-ray spectroscopy analysis was used to detect joint compositions. Findings -It was revealed that the Sn layer was bonded to a Si chip at the Cr-Sn interface and to the Fe substrate by forming an FeSn 2 intermetallic compound (IMC). The IMC is only 1.1 to 1.5 mm in thickness. Thin IMC is highly preferred because IMC deforms a little in accommodating the coefficient of thermal expansion (CTE) mismatch between Si and Fe. Shear test results showed that the fracture forces of the samples passed the military criteria by a wide margin. Originality/value -This new fluxless bonding process on Fe should make Fe or low carbon steel a more likely choice of materials in optical modules and electronic packages.

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Section: Introductionmentioning

confidence: 99%