Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Gonzalez, C.; Timilsina, Rajendra; Li, Guoliang; Duscher, Gerd; Rack, Philip D.; Slingenbergh, W.; Dorp, Willem F. van; Hosson, J.Th.M. De; Klein, K. L.; Wu, Hui-Mei; Stern, Lewis

doi:10.1116/1.4868027

Cited by 30 publications

(26 citation statements)

References 51 publications

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“…Measurements made from a number of such maps showed a maximum Ne penetration depth of roughly 53 nm in Al and 60 nm in Si, which matches the SRIM simulation results closely. Further bright‐field TEM analysis showed significant bubbling beneath the milling patterns in Al, and bubbles as well as amorphous material beneath the milling patterns in Si, which agrees with previous results (Gonzalez et al., ). This is shown in the bright‐field TEM images of Figures (E) and (F).…”

Section: Resultssupporting

confidence: 91%

“…Secondly, as He and Ne are noble gases with low atomic weights, they do not form alloys in metallic materials or concentrate into precipitates that could obscure imaging in the TEM. The drawbacks and the damage caused by the GFIS beams are less well understood, but bubble formation has been found to occur after milling with both He and Ne (Tan et al ., ; Gonzalez et al ., ). The focus of this work is to compare the damage from a Ne GFIS beam with a traditional Ga LMIS FIB to evaluate its efficacy in TEM sample preparation.…”

Section: Introductionmentioning

confidence: 97%

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Evaluation of neon focused ion beam milling for TEM sample preparation

Pekin

Allen

Minor

2016

Journal of Microscopy

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Gallium-based focused ion beams generated from liquid-metal sources are widely used in micromachining and sample preparation for transmission electron microscopy, with well-known drawbacks such as sample damage and contamination. In this work, an alternative (neon) focused ion beam generated by a gas field-ionization source is evaluated for the preparation of electron-transparent specimens. To do so, electron-transparent sections of Si and an Al alloy are prepared with both Ga and Ne ion beams for direct comparison. Diffraction-contrast imaging and energy dispersive x-ray spectroscopy are used to evaluate the relative damage induced by the two beams, and cross-sections of milled trenches are examined to compare the implantation depth with theoretical predictions from Monte Carlo simulations. Our results show that for the beam voltages and materials systems investigated, Ne ion beam milling does not significantly reduce the focused ion beam induced artefacts. However, the Ne ion beam does enable more precise milling and may be of interest in cases where Ga contamination cannot be tolerated.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 97%

Evaluation of neon focused ion beam milling for TEM sample preparation

Pekin

Allen

Minor

2016

Journal of Microscopy

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“…The onset of the swelling is a signature of the crystalline to amorphous transition that occurs as the amorphous silicon density is reduced (increased free volume). At higher doses (Figure d), the helium concentration increases and the bubble size increases which exacerbates the surface swelling . Importantly, the higher photon/ion flux ratio further reduces the ion damage and minimal surface swelling is observed even at the 1 × 10 18 He + cm −2 dose.…”

Section: Resultsmentioning

confidence: 96%

“…While the GFIS source provides higher resolution, the more ubiquitous application of helium and neon ion beam induced synthesis is still in question. The main liability of nanoscale processing with a GFIS source is the notable subsurface damage accumulation that occurs during irradiation of a substrate, which ultimately limits the fidelity and resolution of direct‐write processing capabilities. While the distribution and concentration of defects and implanted species are a function of beam energy and ion/target type, the progression of defects ranging from dislocation bands to the coalescence of subsurface He microbubbles, as a function of dose, was recently observed in the He + /Si system with transmission electron microscopy (TEM): 1 × 10 15 ions cm −2 – dislocation bands, 1 × 10 16 ions cm −2 – onset of amorphization, 1 × 10 17 ions cm −2 – coalescence of subsurface He nanobubbles, 1 × 10 18 ions cm −2 – coalescence of subsurface He microbubbles.…”

Section: Introductionmentioning

confidence: 99%

In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating

Stanford

Lewis

Iberi

et al. 2016

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Focused helium and neon ion (He(+)/Ne(+)) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+)/Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. These results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.

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“…The implantation of ions also leads to bubble formation. These two types of damage appear to limit the use of ion beams for (for instance) mask repair [62].…”

Section: Comparison To Ion Beam Lithographymentioning

confidence: 99%

Sub-10 nm writing: focused electron beam-induced deposition in perspective

Dorp

2014

Appl. Phys. A

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Over the past decade, focused electron beaminduced deposition has become a mature necessary part of the tool box engineers and scientists. This review presents the current state of the art in sub-10 nm focused electron beam deposition and describes the dominant mechanisms that have been found so far for this regime. Several questions regarding patterning at the highest resolution are addressed. What do our findings mean for using sub-10 nm focused electron beam deposition for industrial applications? And which fundamental issues remain to be solved? The overview shows that low-energy secondary electrons dominate the deposition process. As a result, the highest obtainable spatial resolution (averaged over many deposits) is limited by the mean free path of those electrons. Therefore, the only route to improve the resolution beyond the current appears to be using complexes that are sensitive to the high-energy electrons in the incident beam, rather than to the secondaries. Focused electron beam-induced deposition is compared to related techniques. It is on par with resist-based sub-10 nm electron beam lithography, showing similar spatial resolutions at similar electron doses. Regarding ion beam lithography, there are several distinguishing issues. Sub-10 nm writing has yet to be demonstrated for ion deposition, and although the deposition rate is relatively low when writing with electrons, electrons do not induce damage to the sample. The latter is a crucial advantage for focused electron beam-induced deposition. Finally, the main challenges regarding the applicability of sub-10 nm focused electron beam-induced deposition are discussed.

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Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Abstract: Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair.

Cited by 30 publications

References 51 publications

Evaluation of neon focused ion beam milling for TEM sample preparation

Evaluation of neon focused ion beam milling for TEM sample preparation

In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating

Sub-10 nm writing: focused electron beam-induced deposition in perspective

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