Focused ion beam patterning of III–V crystals at low temperature: A method for improving the ion-induced defect localization

Schneider, M.; Giérak, J.; Marzin, J. Y.; Gayral, B.; Gérard, J. M.

doi:10.1116/1.1328054

Cited by 5 publications

(3 citation statements)

References 18 publications

(14 reference statements)

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“…In other cases, the functional thin films are protected with a sacrificial layer [ 27 ]. Other studies have shown that decreasing substrate temperature below room temperature can considerably reduce the amount of damage caused by ion irradiation [ 5 , 28 , 29 ], which can be an interesting route for further research.…”

Section: Discussionmentioning

confidence: 99%

“…The consequences of these events depend on different factors, such as the target material or the working parameters, and the range of damage can go from a few tens to several hundred nanometers, considerably reducing the amount of functional material and significantly affecting the lateral resolution of the patterning. This can represent a serious limitation in certain cases [ 5 ]. In addition, in nanosystems, the range of damage can be comparable to the size of the system, significantly altering their properties [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

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Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi2Se3 Thin Films

et al. 2023

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Focused Ion Beam patterning has become a widely applied technique in the last few decades in the micro- and nanofabrication of quantum materials, representing an important advantage in terms of resolution and versatility. However, ion irradiation can trigger undesired effects on the target material, most of them related to the damage created by the impinging ions that can severely affect the crystallinity of the sample, compromising the application of Focused Ion Beam to the fabrication of micro- and nanosized systems. We focus here on the case of Bi2Se3, a topological material whose unique properties rely on its crystallinity. In order to study the effects of ion irradiation on the structure of Bi2Se3, we irradiated with Ga+ ions the full width of Hall-bar devices made from thin films of this material, with the purpose of inducing changes in the electrical resistance and characterizing the damage created during the process. The results indicate that a relatively high ion dose is necessary to introduce significant changes in the conduction. This ion dose creates medium-range lateral damage in the structure, manifested through the formation of an amorphous region that can extend laterally up to few hundreds of nanometers beyond the irradiated area. This amorphous material is no longer expected to behave as intrinsic Bi2Se3, indicating a spatial limitation for the devices fabricated through this technique.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi2Se3 Thin Films

et al. 2023

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“…However, FIB also generates defects in the crystal structure that may cause optical degradation in photonic devices due to the high momentum transferred by the accelerated ions . In the case of a semiconductor QW structure, the luminescence quenched area of much larger size, more than a few-micrometer scale, than the FIB irradiated region have been reported. − This optical degradation was considered as a phenomenon to be avoided, especially in photonic devices, and researchers have made various attempts to reduce it …”

mentioning

confidence: 99%

Nanoscale Focus Pinspot for High-Purity Quantum Emitters via Focused-Ion-Beam-Induced Luminescence Quenching

et al. 2021

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Epitaxially grown quantum dots (QDs), especially embedded in photonic structures, play an essential role in various quantum photonic systems as on-demand single-photon sources. However, these QDs often suffer from adjacent unwanted emitters, which contribute to the background noise of the QD emission and fundamentally limit the single-photon purity. In this paper, a nanoscale focus pinspot (NFP) technique using focused-ion-beam-induced luminescence quenching enables us to improve single-photon purity from site-controlled QD as a proofof-concept experiment. The optical quality of the QD emission is not degraded while the signal-to-noise ratio of the QD is improved. Moreover, the QD after the NFP technique reveals the single-photon nature at further elevated temperatures owing to the reduced background noise. As the NFP technique is nondestructive, it retains the apparent physical structures and photonic functions, thereby indicating its promising potential for applying diverse high-purity quantum emitters, particularly integrated in photonic devices and circuits.

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FIB technology applied to the improvement of the crystal quality of GaN and to the fabrication of organised arrays of quantum dots

Giérak

Bourhis²,

Jede

et al. 2004

Microelectronic Engineering

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Focused ion beam patterning of III–V crystals at low temperature: A method for improving the ion-induced defect localization

Abstract: Articles you may be interested inFocused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

Cited by 5 publications

References 18 publications

Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi2Se3 Thin Films

Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi2Se3 Thin Films

Nanoscale Focus Pinspot for High-Purity Quantum Emitters via Focused-Ion-Beam-Induced Luminescence Quenching

FIB technology applied to the improvement of the crystal quality of GaN and to the fabrication of organised arrays of quantum dots

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