Forced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals

Liquid phase epitaxial growth of lattice mismatched InSb, GaInAs and GaInAsSb on GaAs substrates using a quaternary melt

“…For a desired epilayer composition, the growth temperature and starting melt compositions are determined using the quaternary phase diagrams [8,11]. The melt was homogenized for 3 h at the growth temperature using accelerated crucible rotation technique (ACRT) [13]. Growth was initiated by lowering the temperature of the melt at 1 C=h for 1 h to crystallize approximately 100 mm thickness of the epilayer followed by rapid cooling to room temperature.…”

Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

“…In both Bridgman and traveling heater method growth, the interface is often concave, allowing nucleations from the sides of the crucible to propagate inward, resulting in polycrystalline growth [1,3]. Slow growth rates, typically on the order of 1 mm/h or less, are required to avoid constitutional supercooling, especially when the additional difficulties of solute rejection and buildup are present [1,4,5]. Because of these problems, there is a lack of constant composition, large, single crystal ternary alloys for use as seeds.…”

“…Methods of stirring to mix the rejected InSb solute into the bulk of the melt have also been studied. The slow growth rates associated with diffusion mixing can be overcome with either magnetic stirring [4,11] or mixing via thermal convection [5]. Significant improvement in radial uniformity was found with both techniques, however the crystals still suffered from large fluctuations in axial composition.…”

Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals

“…Growth of bulk crystals requires stringent control over synthesis and growth conditions in order to avoid crystal defects. [4][5][6][7] The most serious problem encountered in bulk grown ternary materials is cracking. Other crystal growth problems such as precipitates, inclusions, residual impurities, high native defect concentrations, and compositional variation across the substrate and from wafer to wafer are also present.…”