1964
DOI: 10.1016/0013-4686(64)80042-6
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Forces involved in the “specific” adsorption of ions on metals from aqueous solution

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1966
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Cited by 126 publications
(33 citation statements)
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“…As an extension of the work of Andersen et al (30), James et al (27) derived an expression for the solvation or hydration free energy ⌬G solv o of an ion containing a primary sheath of water molecules when moving from the bulk to a solid-liquid interface that also contains a primary sheath of water molecules. When these two sheaths of water molecules overlap due to the adsorption of ion i, the solvation energy is given by (27,29) …”
Section: Proton Chemical Adsorption Energymentioning
confidence: 99%
See 1 more Smart Citation
“…As an extension of the work of Andersen et al (30), James et al (27) derived an expression for the solvation or hydration free energy ⌬G solv o of an ion containing a primary sheath of water molecules when moving from the bulk to a solid-liquid interface that also contains a primary sheath of water molecules. When these two sheaths of water molecules overlap due to the adsorption of ion i, the solvation energy is given by (27,29) …”
Section: Proton Chemical Adsorption Energymentioning
confidence: 99%
“…Several models have been used to predict the electric charging behavior during the adsorption of ionic species, out of which the most frequently used are the double-and triple-layer models (7,8,28). The double-layer model was utilized here, where the potential o was determined by solving [30] with the gradient of the potential given by Eq. [26].…”
Section: Proton Chemical Adsorption Energymentioning
confidence: 99%
“…In our article [22], the Andersen-Bockris model [51] was used to explain the change of ðE ads Þ r¼0 in sequence of Hal À at the Ga/N-MF interface. However as mentioned above, two factors contribute to the ðE ads Þ r¼0 value: the adsorption energy of the ion under infinite dilution DG ads and mutual repulsion energy of ions in the Helmholtz layer.…”
Section: Analysis Of Surface Activity Sequence Of Hal à At Ga/n-mf Anmentioning
confidence: 99%
“…In the present paper, the values of lnb (Table 1) and therefore DG ads were obtained for the sequence of Hal À at the Ga/N-MF interface. The Andersen-Bockris model [51] was used to analyze the change in DG ads . According to this model, adsorption of Hal À anions may be regarded as the reaction of solvent molecule substitution at the metal surface by the adsorbed ions:…”
Section: Analysis Of Surface Activity Sequence Of Hal à At Ga/n-mf Anmentioning
confidence: 99%
“…The explanation of such phenomena, commonly included in the term "Marangoni effect," was suggested as early as 1855 by Thomson (11). Examples of such effects include "tears of strong wine" and the tendency for liquids, such as lubricating oils, to "crawl" out of open containers.…”
Section: Qualitative Description Of Mechanis~mentioning
confidence: 99%