Formation and Characteristics of Thin Films of ZrO₂-8 mol % Y₂O₃ Solid Electrolytes

Abstract

Thin films of ZrO2-8mol%Y2O3 have been deposed by pulsed DC magnetron sputtering method. The substrates of Ni-cermet and alloy-600 for the films were used. The results of the investigation of the X-ray diffraction patterns and SEM showed that the films are nanocrystalline and belong to cubic symmetry. The relaxation process is related to the ion transport in thin films. The results of the investigation of the temperature dependencies of thin films ionic conductivity (σ) showed that the dependence σ(T) is caused by the temperature dependence of oxygen vacancy mobility, while the number of charge carriers remains constant with temperature.

Ionic conductivity of e-beam deposited yttrium stabilized zirconia thin films

“…The problem can be solved using YSZ thin films. A variety of chemical and physical methods, such as MOCVD, CVD, spray pyrolysis, PLD, PVD for producing solid oxide electrolyte thin films exists [4,5].…”