Formation and characterization of grain-oriented VO2 thin films

Natale, J. F. De; Hood, Patrick J.; Harker, Alan B.

doi:10.1063/1.343605

Cited by 172 publications

(108 citation statements)

References 24 publications

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“…19,21,35 Our sol-gel derived VO 2 films show excellent SMT characteristics with the phase magnitude of more than 4 orders, which in turn shows the good VO 2 stoichiometry and highly oriented crystallization.…”

Section: Resultsmentioning

confidence: 99%

“…In turn, film microstructure influences the SMT properties. 16,21,35,36 From the cross-section images, it can be observed that the thickness of VO 2 films is about 80-100 nm.…”

Section: Resultsmentioning

confidence: 99%

“…These values are as good as the highly oriented VO 2 thin films prepared by other methods. 21,35 The switching temperature (Tc), defined from the differential log 10 R-T curves (the insert), is about 68.8…”

Section: Resultsmentioning

confidence: 99%

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Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method

Fan

Chen

et al. 2013

AIP Advances

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VO2 thin films with large-area were prepared on Al2O3 substrates by a simple sol-gel method. After an annealing treatment under low vacuum condition, all the VO2 films showed a preferred growth direction and exhibited excellent semiconductor-metal transition (SMT) characteristics. The structure and electrical properties of the obtained VO2 films were investigated systematically. Raman spectra, X-ray diffraction and X-ray absorption spectra measurements pointed out that the VO2 film on ${\rm A}{\rm l}_{\rm 2} {\rm O}_{\rm 3} ( {{\rm 10}\overline {\rm 1} {\rm 0}})$Al2O3(101¯0) substrate showed a M1 phase instead of M2 phase as reported in previous studies. Based on the experiment results, it was suggested that the strained structure of oriented VO2 films could be a mechanism for the formation of the intermediate M2 phase, whereas it is difficult to access the pure M2 phase of undoped VO2 films. VO2 film on ${\rm A}{\rm l}_{\rm 2} {\rm O}_{\rm 3} \left( {{\rm 10}\overline {\rm 1} {\rm 0}} \right)$Al2O3101¯0 substrate showed a lower SMT temperature compared to VO2 film on Al2O3 (0001), which can be mostly attributed to the differences of both lattice mismatch and thermal stress. The present results confirm and make clear the relevance of the substrate orientation in the growth of VO2 film and their different contributions to the SMT characteristics in vanadate systems.

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Section: Resultsmentioning

confidence: 99%

“…In turn, film microstructure influences the SMT properties. 16,21,35,36 From the cross-section images, it can be observed that the thickness of VO 2 films is about 80-100 nm.…”

Section: Resultsmentioning

confidence: 99%

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Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method

Fan

Chen

et al. 2013

AIP Advances

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“…The growth and the physical properties of vanadium dioxide thin films have been explored by various deposition techniques such as electron beam evaporation [8][9][10] , reactive sputtering [10][11][12][13][14][15] , sol-gel process 16,17 , chemical vapor deposition 17 , atomic layer deposition 18 , and pulsed laser ablation 19,20 . Though it was relatively straightforward to achieve a single phase VO 2 , the MST behaviors, i.e.…”

mentioning

confidence: 99%

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Kittiwatanakul

Laverock

Newby

et al. 2013

Journal of Applied Physics

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We grew highly textured phase pure VO 2 thin films on c-plane Al 2 O 3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O 2 flow rate increases, the [010] lattice parameter for monoclinic VO 2 was reduced and coincidently distinctive changes in the metalsemiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO 2 , and consequently the MST.

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“…These anomalous SPR hysteresis characteristics of Au-VO 2 films sputtered at higher substrate temperatures could be due to the thermal stress or microstructures of the synthesized films. Since, it is commonly assumed in the VO 2 thinfilm literature that, given a controlled oxide stoichiometry, the sharpness of the phase transition [48] as well as its hysteresis width and critical temperature are dependent on the stress [49] and microstructure of the films [50].…”

Section: Surface Plasmon Resonance Wavelength Shift and Thermochromicmentioning

confidence: 99%

Thermochromic nanocrystalline Au–VO2 composite thin films prepared by radiofrequency inverted cylindrical magnetron sputtering

et al. 2010

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Highly crystalline Au-VO 2 nanocomposite thin films were prepared on Corning glass substrates by reactive radiofrequency inverted cylindrical magnetron sputtering (ICMS). It is a low cost potential coating technology for the production of large area uniform nanocomposite thin films exhibiting plasmonic properties. This paper reports the synthesis and feasibility of reliably reproduced high quality of Au-VO 2 by ICMS. Structural, morphological, interfacial analysis and optical properties of synthesized Au-VO 2 nanocomposite thin films are reported.

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Formation and characterization of grain-oriented VO2 thin films

Cited by 172 publications

References 24 publications

Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method

Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Thermochromic nanocrystalline Au–VO2 composite thin films prepared by radiofrequency inverted cylindrical magnetron sputtering

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