Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively-Coupled High-Density Plasmas using a Dual Rotated Spiral Antenna System

Abstract

Thin silicon dioxide films were obtained by low-temperature plasma oxidation. Plasma oxidation was performed using a specially-designed new plasma source, called dual rotated spiral antenna (DuRoSA) system. This new plasma source produced high density plasmas (~ 1012 cm-3) having relatively low electron temperatures (2.5 ~ 4 eV). The temperature dependence of the plasma oxidation was found to be less sensitive than that of the high temperature thermal oxidation. The decrease in both oxidation rate and electron density with increasing oxygen fraction suggested that the negative oxygen ions may play the key role in plasma oxidation.

Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals

“…Of these methods, the use of microwave plasmas [2][3][4]9,[19][20][21] gives a higher electron density (³10 12 /cm 3 ) with a lower electron temperature (³1 eV) than that of other plasmas (e.g., inductively coupled plasmas). 22) The use of microwave plasma enables high-quality oxidation and provides a wide process window. Furthermore, it does not produce particle or metal contamination.…”