Formation and control of boron buried layers in silicon using an excimer laser

Verma, Gaurav; Slaoui, A.; Talwar, S.; Sigmon, T. W.

doi:10.1109/55.363214

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“…It shows a monotonic increasing relationship. The melt/solid interface depth against different fluences reported by Verma et al[12] is also shown (open circles). The melt/solid interface was determined by photoreflectance.…”

mentioning

confidence: 84%

Excimer laser assisted spin-on doping of boron into silicon

Lo¹,

Wong²,

Cho³

et al. 1996

Semicond. Sci. Technol.

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n-type silicon wafers were doped by boron using a spin-on doping method. A XeCl pulsed excimer laser (λ = 308 nm) was used to irradiate the sample at room temperature. Properties such as sheet resistance, carrier concentration profile, Hall mobility and structural defects were then determined. The results show that the sheet resistance decreases with an increase of laser fluence as well as with an increase in pulse number. It attains a low value of 10 2 −1 for laser fluence above 1.0 J cm −2 . An optimal doping profile with surface carrier concentration of 10 18 cm −3 and a junction depth of 0.36 µm was achieved by 25 pulses of 1.5 J cm −2 irradiation. Channelled Rutherford backscattering spectroscopy showed that no obvious lattice damage exists in the doped Si wafer.

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confidence: 84%