Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition

Abstract

We report on the growth and optical characteristics of Eu-doped ZnO (ZnO:Eu) films on ZnO nanowires (NWs) by sputtering-assisted metalorganic chemical vapor deposition. ZnO:Eu films are grown by sputtering Eu2O3 targets during the growth of ZnO NWs. The crystal quality of ZnO host materials is improved by using the NW configuration due to a strain relaxation effect, which is elucidated by optical characterization. An enhancement of Eu3+ luminescence at 613 nm is observed at room temperature for the ZnO:Eu/ZnO NWs as compared to a conventional film. Site-selective spectroscopy by direct excitation of Eu3+ ions by a tunable dye laser reveals that the most intense emission peak is located at a wavelength of ∼613.5 nm, which coincides with the main peak under indirect excitation. This result indicates that the observed enhanced Eu luminescence is due to a relative increase in the number of Eu centers which can effectively be excited via the host material.

Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al2O3/n-ZnO Heterostructures

“…Then the specimen was removed from the milling and mounted on a reinforcement ring for TEM observation. The concentration of Eu in ZnO:Eu was estimated to be 0.1 at% whose details are discussed in our previous publications, [24][25][26][27][28] as well as Appendix A. After the growth, samples were annealed at 600 °C for 30 min in O 2 ambient to enhance the luminescence from Eu 3+ ions.…”

“…Our group has so far demonstrated clear Eu luminescence from ZnO:Eu grown by sputteringassisted metalorganic chemical vapor deposition (MOCVD). [24][25][26][27][28] In this contribution, the heterojunction p-GaN/n-ZnO LED structure using ZnO:Eu as the active layer is demonstrated in order to realize a low-cost and environmentally friendly red LEDs.…”

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration

“…However, their vast application in the industry is hindered by the high cost of instrumentation. Wet chemical etching [13,14] can fabricate SiNWs with low-cost alternatives, but it is prone to isotropic etching, and the qualities of SiNWs can be influenced by the etching solution's concentration and composition. MaCE plays an essential role in the preparation of SiNWs due to its simplicity, versatility, and cost-effectiveness compared with other etching methods.…”