Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures

Abstract

Schottky interfaces were formed on InP porous structures by the electrodeposition of Pt films. The coverage of the Pt film and its optical reflectance depended largely on the surface morphology of the porous structure. Removal of the irregular top layer formed at the initial stage of the pore formation effectively improved the coverage of the Pt film inside pores. According to I-V measurements, the Pt/porous InP showed higher photocurrents with lower dark currents than those of a reference planar sample.