Formation and Shape Transition of Nanostructures on Si(100) surfaces after MeV Sb Implantation

Dey, S.; Paramanik, Dipak; Ganesan, V.; Varma, Shikha

doi:10.1016/j.apsusc.2006.01.049

Cited by 7 publications

(3 citation statements)

References 34 publications

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“…The critical fluence, 24 × 10 15 ions/cm 2 (critical time=40 min) is, however larger for keV irradiation. A decrease in surface roughness with increasing fluence, beyond a critical fluence, has also been observed for MeV Sb implantation in Si (100) 33 and for keV implantations of P and As in amorphous films 35 . Figure 14 shows the as-implanted Raman spectra from the InP samples implanted with various Sb doses.…”

Section: Nano-patterning By Mev Ion Irradiationmentioning

confidence: 82%

“…The amorphization can lead to relaxations 30,31 and smoothening of the surface via decreased strains 32 . Surface smoothening has been reported for MeV Sb ion implantation in Si 33 and InP 34 as well as for keV implantations of P and As in amorphous films 35 . For III-V semiconductors like InP and other zinc-blend structures, the ûrst order Raman spectrum consists of usually two Raman modes corresponding to the Longitudinal Optical (LO) and Transverse Optical (TO) phonons associated with the Brillouin zone center.…”

Section: Methodsmentioning

confidence: 99%

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Nano Pattern Formation and Surface Modifications by Ion Irradiation

Paramanik¹,

Majumder²,

Sahoo³

et al. 2009

DSJ

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Ion Irradiation is a technologically important technique to modify the surfaces. We have investigated the patterning of InP(111) surfaces by low energy (3 keV) as well as high energy (1.5 Mev) ion beams. After low energy ion irradiation, surfaces exhibit well defined nano dots which ripen at initial stages but exhibit fragmentations at high fluences. The surface rms, at both the energies, displays a similar behaviour of initially increasing with increasing fluences but decreasing for higher fluences. The studies show some common features at these low and high energies, like the smoothening of surface beyond the a/c transition.

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Section: Nano-patterning By Mev Ion Irradiationmentioning

confidence: 82%

Section: Methodsmentioning

confidence: 99%

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Paramanik¹,

Majumder²,

Sahoo³

et al. 2009

DSJ

Self Cite

View full text Add to dashboard Cite

show abstract

“…The amorphization can lead to relaxations [9,10] and smoothening of the surface via decreased strains [11]. Surface smoothening has been reported for MeV Sb ion implantation in Si [12] and InP [13] as well as for keV implantations of P and As in amorphous films [14].…”

Section: Resultsmentioning

confidence: 99%

Morphological evolution of InP nano-dots and surface modifications after keV irradiation

Paramanik¹,

Sahu

Varma³

2008

J. Phys. D: Appl. Phys.

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Evolution and coarsening behaviour of self-assembled nano-dots fabricated on an InP surface by 3 keV Ar ion sputtering have been studied in conjunction with the structural modifications at the surface. The dots have been produced in off-normal geometry but in the absence of rotation. For small sputtering durations, the dots coarsen and agglomerate, up to a critical time tc, while the surface roughens and experiences a tensile stress. A relaxation in this stress is observed after the surface becomes amorphized at tc, beyond which an inverse coarsening, fragmentation of dots and a smoothened surface are observed.

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Studies of InP nano dots formation after keV Ar+ irradiation

Paramanik

Varma

2008

Nuclear Instruments and Methods in Physics Research Section B:

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Formation and Shape Transition of Nanostructures on Si(100) surfaces after MeV Sb Implantation

Cited by 7 publications

References 34 publications

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Morphological evolution of InP nano-dots and surface modifications after keV irradiation

Studies of InP nano dots formation after keV Ar+ irradiation

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