Formation and structural features of silicon quantum dots in germanium

Stepina, N. P.; Zinov’eva, A. F.; Deryabin, A. S.; Zinov’ev, V. A.; Володин, В. А.; Shklyaev, A. A.; Двуреченский, А. В.; Гапоненко, С. В.

doi:10.3103/s8756699013050038

Cited by 3 publications

(11 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…• C. The details of QD formation are described elsewhere [13]. The density of QD array obtained by STM is about ∼ 10 11 cm −2 , the islands have a pyramidal shape with a hexagonal base, the average lateral size l is about of 15 nm and aspect ratio h/l ∼ 0.1.…”

Section: Methodsmentioning

confidence: 99%

“…Samples were grown by molecular beam epitaxy on Ge(111) substrates. Si QDs are formed by 2.5 Si bilayers (BLs) deposition at 400 • C. The details of QD formation are described elsewhere [13]. The density of QD array obtained by STM is about ∼ 10 11 cm −2 , the islands have a pyramidal shape with a hexagonal base, the average lateral size l is about of 15 nm and aspect ratio h/l ∼ 0.1.…”

Section: Methodsmentioning

confidence: 99%

“…Based on the STM study [13], the Si truncated cone with base length l=15 nm and height h=1.5 nm was used as a Si QD model. The Si content was chosen to be 88% according to the Raman data.…”

Section: Electron Spin States In a Si Qdmentioning

confidence: 99%

“…The effective mass calculations of the energy spectrum, including strain effects for the electron localized in a Si QD grown on Ge(111), were performed using the NEXTNANO program [15]. Based on the STM study [13], the Si truncated cone with base length l=15 nm and height h=1.5 nm was used as a Si QD model. The Si content was chosen to be 88% according to the Raman data.…”

Section: Electron Spin States In a Si Qdmentioning

confidence: 99%

See 3 more Smart Citations

Electron localization in self-assembled Si quantum dots grown on Ge(111)

Stepina

Zinovieva

Zinovyev

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge (111) substrates, the ESR signal with g-factor g = 2.0022 ± 0.0001 and ESR line width ∆H ≈ 1.2 Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

“…Based on the STM study [13], the Si truncated cone with base length l=15 nm and height h=1.5 nm was used as a Si QD model. The Si content was chosen to be 88% according to the Raman data.…”

Section: Electron Spin States In a Si Qdmentioning

confidence: 99%

Section: Electron Spin States In a Si Qdmentioning

confidence: 99%

See 2 more Smart Citations

Electron localization in self-assembled Si quantum dots grown on Ge(111)

Stepina

Zinovieva

Zinovyev

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Vibrational spectra of nanostructures differs from vibrational spectra of their constituting bulk materials. It is determined by the composition, size, shape, and mechanical stresses of these materials [3,4]. It is important to know how the phonon-plasmon and electron-phonon interaction modifies vibrational spectra of doped semiconductor nanostructures and, as a consequence, their Raman scattering spectrum (RSS).…”

Section: Introductionmentioning

confidence: 99%

Electron-phonon interaction and Raman scattering in doped GaAs/AlAs superlattices

Володин

2014

Optoelectron.Instrument.Proc.

Self Cite

View full text Add to dashboard Cite

The Raman scattering spectroscopy method is used to study the interaction of phonons and free charge carriers in doped semiconductor nanostructures (superlattices). In doped superlattices based on polar semiconductors, the collective vibrational modes of free charge carriers (plasmons) shield the long-range Coulomb interaction of cations and anions, which leads to the formation of mixed phononplasmon modes. The angular dispersion (anisotropy) of phonon-plasmon modes in doped GaAs/AlAs superlattices is studied. The observed anisotropy is due to the anisotropy of dielectric permeability in superlattices.

show abstract

Silicon Cluster Arrays on the Monolayer of Hexagonal Boron Nitride on Ir(111)

et al. 2022

View full text Add to dashboard Cite

Periodic structures of silicon are of interest in quantumdot-based applications because of their unique optical and electronic properties. We report on the fabrication of stable quasi-ordered Si nanocluster arrays on the moiréof a hexagonal boron nitride (h-BN) monolayer on Ir(111). The h-BN monolayer promotes the growth of regular Si nanoclusters at 130 K and electronically decouples the clusters from the underlying metallic substrate. Using scanning tunneling microscopy and spectroscopy, we have investigated the cluster binding sites, their electronic structure, and their thermal stability. We find that the clusters display a size-dependent bandgap and that they are stable up to 577 K, after which cluster coalescence degrades the arrays.

show abstract

Formation and structural features of silicon quantum dots in germanium

Cited by 3 publications

References 8 publications

Electron localization in self-assembled Si quantum dots grown on Ge(111)

Electron localization in self-assembled Si quantum dots grown on Ge(111)

Electron-phonon interaction and Raman scattering in doped GaAs/AlAs superlattices

Silicon Cluster Arrays on the Monolayer of Hexagonal Boron Nitride on Ir(111)

Contact Info

Product

Resources

About