Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions

Акчурин, Р. Х.; Berliner, L. B.; Boginskaya, I. A.; Gordeev, Evgeniy G.; Егорова, Е. В.; Маrmalyuk, А. А.; Ладугин, М. А.; Surnina, M. A.

doi:10.1134/s1063784214010034

Cited by 2 publications

(1 citation statement)

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“…The periodic boundary conditions are fulfilled when atoms reach the boundaries of the simulation area. The intermixing of In atoms with Ga and As atoms of the substrate is neglected because it is insignificant at low growth temperatures . However, it can occur with the In atoms within the growing layer, including droplet regions.…”

Section: Description Of the Modelmentioning

confidence: 99%

Hybrid Analytical–Monte Carlo Model of In/GaAs(001) Droplet Epitaxy: Theory and Experiment

Balakirev

Солодовник

Агеев

2018

Physica Status Solidi (b)

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We study the droplet epitaxy of indium on the As‐stabilized GaAs(001) substrate using the analytical theory of nucleation combined with kinetic Monte Carlo simulations. The developed model allows considering the atomistic processes of nucleation and growth of droplets without strict binding to the zinc blende structure. We assume that the formation of stable droplets results from the alternation of the processes of assembly and disassembly of subcritical islands. We use a concept of nonmonotonic dynamics of critical size and supersaturation to explain the physical processes on the surface. The thickness of the indium wetting layer exceeds a value of one monolayer and increases gradually with decreasing temperature, which is due to the long‐range interaction of indium with the GaAs substrate. The simulation results are in good agreement with the experiments in a wide range of growth temperatures.

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Section: Description Of the Modelmentioning

confidence: 99%