2021
DOI: 10.1116/6.0001308
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Formation, evolution, and prevention of thermally induced defects on germanium and silicon upon high-temperature vacuum annealing

Abstract: This Letter reports the formation, evolution, and prevention of thermally induced defects on germanium upon high-temperature (up to 890 °C) vacuum (2×10−6 Torr or 2.67×10−6 mbar) annealing. It is found that the shape of defects evolves depending on the annealing temperature and duration. The defect shape can be classified into three groups (pyramid, expanded pyramid, and doughnut), considering the interplay of chemical desorption and surface diffusion. The effects of annealing conditions on the density and siz… Show more

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Cited by 7 publications
(3 citation statements)
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“…The ramping rate of temperature was set to be 25 C/min. The cover of another cleaned Ge wafer was simply placed on the hole patterned sample to prevent the formation of thermally induced defects due to high temperature and high vacuum annealing 29 .
Figure 1 ( a ) The shape evolution process of the GON structure.
…”
Section: Methodsmentioning
confidence: 99%
“…The ramping rate of temperature was set to be 25 C/min. The cover of another cleaned Ge wafer was simply placed on the hole patterned sample to prevent the formation of thermally induced defects due to high temperature and high vacuum annealing 29 .
Figure 1 ( a ) The shape evolution process of the GON structure.
…”
Section: Methodsmentioning
confidence: 99%
“…After cleaning the hole patterned silicon wafer using the piranha solution and diluted HF solution, the sample is annealed at 1150 °C for 60 min (AR = 7) and 150 min (AR = 12) under a high vacuum condition (2 × 10 −6 Torr). [ 32 ] The ramping rate of the vacuum furnace is set to be 25 °C min −1 .…”
Section: Methodsmentioning
confidence: 99%
“…The ramping rate of temperature was set to be 25 • C/min. The cover of another cleaned Ge wafer was simply placed on the hole patterned sample to prevent the formation of thermally induced defects due to high temperature and high vacuum annealing 28 .…”
Section: Gon Fabricationmentioning
confidence: 99%