Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon

Oliveira, V.A.; Marie, B.; Cayron, Cyril; Marinova, Maya; Tsoutsouva, M.G.; Sio, Hang Cheong; Lafford, Tamzin; Baruchel, J.; Audoit, G.; Grenier, Adeline; Thi, Thu Nhi Tran; Camel, D.

doi:10.1016/j.actamat.2016.08.063

Cited by 43 publications

(28 citation statements)

References 37 publications

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“…As a consequence, the experimental results concerning {111} facets kinetics in our experiments can only be compared to the theoretical law corresponding to a growth mechanism eased by the presence of dislocations (Figures 5 and 7). This is in agreement with the fact that dislocations are expected to be easily generated during silicon growth and found emerging at the level of facets as shown for example in [7,8,23]. On the one hand, the kinetic quadratic law coefficient obtained in the case of grain boundary grooves is consistent with the one obtained by Voronkov [17].…”

Section: Discussionsupporting

confidence: 80%

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{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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Section: Discussionsupporting

confidence: 80%

“…The presence of {111} facets is thus an essential feature of silicon grain growth and competition. Indeed, frequent twinning nucleation take place at the level of the {111} facets in the grain boundary grooves or at the edges of the samples [7,8].…”

Section: Introductionmentioning

confidence: 99%

{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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“…the dendritic casting method [9,10], the mono-like solidification (ML-Si) [11][12][13] and the high performance multi-crystalline silicon (HP mc-Si) [14]. Both ML-Si and HP mc-Si techniques, which are used in the industry, produce ingots with a lower dislocation density compared to the conventional mc-Si while allowing the use of low-cost casting solidification methods.…”

Section: Introductionmentioning

confidence: 99%

Strain building and correlation with grain nucleation during silicon growth

et al. 2019

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This work is dedicated to the grain structure formation in silicon ingots with a particular focus on the crystal structure strain building and its implication in new grain nucleation process. The implied mechanisms are investigated by advanced in situ X-ray imaging techniques during silicon directional solidification. It is shown that the grain structure formation is mainly driven by Σ3 <111> twin nucleation. Grain competition phenomena occurring during the growth process lead to the creation of higher order twin boundaries, localised strained areas and associated crystal structure deformation. On the one hand, it is demonstrated that local strain building can be directly related to the characteristics of the twin boundaries created during silicon growth due to grain competition. On the other hand, space restriction due to competition during growth can be at the origin of local strain building as well. Finally, the accumulation of all these factors generating strain is responsible for spontaneous new grain nucleation. When occurring, both grain nucleation and subsequent grain structure reorganisation contribute to lower the strain in the growing ingot.It is demonstrated as well that the local distribution of the strained areas created during silicon growth is retrieved after cooling down, from melting temperature to room temperature, on top of an additional larger scale deformation of the sample due to the cooling down only.

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“…In addition, these features display misorientations in the PPOS map, of the order of a few 10 À3 , confirming that this is 'imperfect twinning'. A detailed discussion of the formation mechanism of those domains is presented by Oliveira et al (2015).…”

Section: Observation Of Defects On Rci Mapsmentioning

confidence: 99%

Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

et al. 2015

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Rocking curve imaging (projection and section X-ray topography) has been used to study the generation and propagation of defects at the junctions between and above the seed crystals in mono-like silicon ingots. The images of different kinds of defects such as precipitates, dislocations and twins in the integrated intensity, full width at half-maximum and peak position maps resulting from the experiment have been studied. The qualitative and quantitative information that can be extracted from these maps, in particular the contrast of the images of the various defects, is discussed. These defects have a detrimental effect on solar cell efficiency and their detailed investigation allows clues to be obtained in order to improve the growth process. This work shows that synchrotron X-ray diffraction imaging techniques, because of their high angular resolution (<10 À4 ) and large field of view (several mm 2 ), constitute a powerful tool for investigating the initial stages of growth of directionally solidified mono-like silicon.

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Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon

Cited by 43 publications

References 37 publications

{1 1 1} facet growth laws and grain competition during silicon crystallization

{1 1 1} facet growth laws and grain competition during silicon crystallization

Strain building and correlation with grain nucleation during silicon growth

Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

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