Formation mechanism of graphene buffer layer on SiC(0 0 0 1)

Strupiński, Włodek; Grodecki, K.; Caban, P.; Ciepielewski, P.; Jóźwik, I.; Baranowski, J. M.

doi:10.1016/j.carbon.2014.08.099

Cited by 37 publications

(24 citation statements)

References 49 publications

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“…6(g), which means a faster Si sublimation on the higher temperature surface supplies sufficient C atoms to facilitate the formation of the high quality surface buffer layer. Such investigation also agrees with the report in the previous study [11]. In addition, under a higher etching temperature in Fig.…”

Section: Resultssupporting

confidence: 93%

“…Therefore, surface buffer layer more likely be etched at upper side of a terrace (B side). According to the report from Strupinski et al [11], the surface buffer layer will form in higher quality with a more ordered structure and less sp 3 hybridization under a condition of faster Si sublimation (i.e., more supply of free C atoms). They also reported that buffer layer formed near an upper side of a step bunch has higher quality due to the abundant supply of C atoms form the step bunch.…”

Section: Resultsmentioning

confidence: 99%

“…All the SEM images were obtained with a primary electron beam of 2 keV, because the formation of buffer layer and graphene on SiC substrates are easily distinguished by low-voltage SEM contrasts [11,23,24]. Ex situ micro probe Raman spectroscopy was also carried out for graphene and buffer layer evaluation before and after the selective oxygen etching.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore the surface buffer layer actually plays a significant role as a precursor for monolayer graphene growth. However, there is just few report focusing on the quality of surface buffer layer [11,12], and thus more investigation of the surface buffer layer is necessary.…”

Section: Introductionmentioning

confidence: 99%

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<i>In Situ </i>Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

Wang

Nakahara

Saito

2017

e-J. Surf. Sci. Nanotech.

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Thermal decomposition of SiC has been used for the fabrication of high quality monolayer graphene and graphene nanoribbons on semi-insulating substrates. In this work, we propose a selective oxygen etching method to remove buffer layers on SiC surfaces that are connected to monolayer graphene formed from step edges. A thermal treatment in an extreme low partial pressure oxygen diluted by argon atmosphere was found to be effective to etch only the buffer layers and remain monolayer graphene areas intact, which might be significant for the application of graphene to electric/spintronic devices. The etching processes of surface buffer layer investigated by in situ scanning electron microscopy and scanning tunneling microscopy revealed an etching rate dependence on a distance from a step edges, suggesting a distribution of crystallinity of surface buffer layer on a terrace.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

<i>In Situ </i>Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

Wang

Nakahara

Saito

2017

e-J. Surf. Sci. Nanotech.

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“…Such contribution could be a consequence of residual Si atoms aggregated in the step edge area 55 or growth disorder near the step edges leading to deterioration of graphene's quality and promoting short-range scattering. 72 …”

Section: -5mentioning

confidence: 99%

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Ciuk

Çakmakyapan

Özbay

et al. 2014

Journal of Applied Physics

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The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ∼ 10? nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ∼ 190? Ωμ m for step height hS? =? 10? nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. © 2014 AIP Publishing LLC

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2D Oxides Realized via Confinement Heteroepitaxy

Türker

Dong

Wetherington

et al. 2022

Adv Funct Materials

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Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO 2 and bilayer Ga 2 O 3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O 2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga 2 O 3 ) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga 2 O 3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. The study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.

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Formation mechanism of graphene buffer layer on SiC(0 0 0 1)

Cited by 37 publications

References 49 publications

<i>In Situ </i>Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

<i>In Situ </i>Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

2D Oxides Realized via Confinement Heteroepitaxy

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