Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl

Hamamatsu, A.; Kaneshiro, C.; Fujikura, Hajime; Hasegawa, Hideki

doi:10.1016/s0022-0728(99)00107-2

Cited by 76 publications

(66 citation statements)

References 20 publications

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“…These pores were basically running along the k001l-direction, indicating a preferential attack perpendicular to the (100) plane. This result is the same as the photoelectrochemical etching of (001) n-type InP, which also shows preferential etching along the k001l-axis [7]. Fig.…”

Section: Resultssupporting

confidence: 77%

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Morphological characterization of porous InP superlattices

Tsuchiya

Hueppe

Djenizian

et al. 2004

Science and Technology of Advanced Materials

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Porous superlattices n-type (100) InP are produced electrochemically on by changing the applied current or potential periodically in 1 M HCl þ 1 M HNO 3 solutions. The superlattice consists of stack of alternating two layers with various morphologies and porosities. The planview morphologies of the top surface of superlattice were almost same, and the pore size was varied in the nano-order range. On the other hand, the cross-sectional morphologies depend strongly on the electrochemical condition. For low applied currents or potentials such as 10 mA or 1.5 V Ag/AgCl , respectively, porous layers with a facet-like structure were formed. The size of each facet did not change with the etching time, but the number of the facets increased with time. For high currents or potentials such as 50, 100 mA or 3 V Ag/AgCl , respectively, a tree-like structure with random and/or tangled branches was observed. At a still higher potential of 5 V Ag/AgCl , the porous layer exhibited fairly regular array of straight pores. Therefore, it is found that the morphology of the porous layer can be highly controlled by the applied current or potential. q

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Section: Resultssupporting

confidence: 77%

“…For III -V compound semiconductors such as GaAs [2 -4], InP [5][6][7][8][9][10][11] and InSb [12], formation of porous layers and their many different properties as compared to the bulk materials have also been investigated.…”

Section: Introductionmentioning

confidence: 99%

Morphological characterization of porous InP superlattices

Tsuchiya

Hueppe

Djenizian

et al. 2004

Science and Technology of Advanced Materials

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“…We have recently shown that <001>-oriented nanometer sized straight pores, penetrating deep into the semiconductor, can be produced by anodizing (001)-oriented n-type InP in the passive region in a suitable electrolyte [28][29][30]. Such capability of forming <001>-oriented pores seems to be useful for various applications, since (001)-oriented substrates are technologically more important than the (111)-oriented one.…”

Section: 1)formation Of Nanoporesmentioning

confidence: 99%

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>-oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. Key words:III-V semiconductors, anodic etching, nanopore, electrodeposition, Schottky barrier 1.IntroductionIt is widely recognized that artificial semiconductor nanostructures such as quantum wires (QWRs) and quantum dots(QDs) give rise to new rich functionalities to materials. They produce new quantum state spectra with novel state transitions and linear and non-linear quantum transport phenomena, and open up opportunities for novel quantum devices which control quantum-mechanical behavior of electrons and photons in various sophisticated ways.The standard approach for semiconductor nanostructure formation is to use fine crystal growth techniques such as molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). To fabricate devices, various standard etching and metal deposition techniques are used together with standard lithography techniques. However, the electrochemical approaches, if it attains sufficiently high controllability at the nanometerscale, seems to be highly useful for nanostructure formation and processing. The expected advantages include: (1) process simplicity and versatility, (2) capability of self-organization, (3) low processing temperature, (4) low process induced damage, (5) precise electrical control and (6) low processing costs.Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].The purpose of this paper is to review recent attempts by the authors' group at RCIQE, Hokkaido University, that have been carried out in order to investigate feasibility of utilizing electrochemical processes for nanometer-scale processing and nanostructure formation in III-V semiconductors. Topics discussed in this paper include controlled (1) anodic etching of InP,

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“…Canham 3 reported that the photoluminescence ͑PL͒ peak obtained from porous Si showed a significant blue shift with reference to the bandgap energy of a bulk Si, showing evidence of quantum confinement in porous structures. Several groups later reported on porous structures made of III-V semiconductor materials such as GaAs, 4,5 GaP, 6,7 InP, [8][9][10] and GaN. 11,12 Up to the present, various crystal orientations and electrochemical conditions have been investigated on III-V materials to reveal structural properties and their tunability.…”

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confidence: 99%

Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions

Sato

Fujino

Hashizume

2007

Electrochem. Solid-State Lett.

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A two-step electrochemical process using anodic and cathodic reactions was developed to form size-controlled nanostructures on InP͑001͒ substrates. After anodic formation of a nanopore array, the cathodic decomposition process was applied to reduce the thickness of InP nanowalls. The etching rate of the nanowalls was extremely small and strongly dependent on the cathodic bias and crystal orientations of the wall surface. Wall thickness could be controlled in the range of 10-30 nm by changing the cathodic bias and processing time. © 2007 The Electrochemical Society. ͓DOI: 10.1149/1.2713662͔ All rights reserved.Manuscript submitted November 9, 2006; revised manuscript received January 10, 2007. Available electronically March 13, 2007. High-density formation of semiconductor nanostructures has recently been intensely researched for applications such as photonic crystals, quantum and optoelectronic devices, and chemical and biochemical sensors. Mainstream approaches to forming semiconductor nanostructures have used conventional methods such as lithography, dry etching, or crystal growth processes. For example, reactive ionbeam etching ͑RIBE͒, molecular beam epitaxy ͑MBE͒, and metallorganic vapor phase epitaxy ͑MOVPE͒ are common techniques for this purpose in the semiconductor community. One possible alternative approach is to apply the electrochemical process to semiconductors. With this process, a wide variety of semiconductor nanostructures can be obtained by modifying the surface using electrochemical anodic and cathodic reactions. The electrochemical process seems to be extremely promising for creating semiconductor nanostructures due to its unique features such as being a lowtemperature process, causing low processing damage, and having a simple process and a low cost.The most well-known application of the electrochemical process is for forming a porous Si structure using the anodic reaction in an HF-based electrolyte.1-3 This has given a visible light-emitting property to Si by modifying the surface. Canham 3 reported that the photoluminescence ͑PL͒ peak obtained from porous Si showed a significant blue shift with reference to the bandgap energy of a bulk Si, showing evidence of quantum confinement in porous structures. Several groups later reported on porous structures made of III-V semiconductor materials such as GaAs, 4,5 GaP, 6,7 InP, [8][9][10]12 Up to the present, various crystal orientations and electrochemical conditions have been investigated on III-V materials to reveal structural properties and their tunability. We have recently succeeded in the anodic formation of arrays of straight nanopores on n-InP͑001͒ substrates. [13][14][15] The straightness of pores in the depth direction has been dramatically improved using an HCl-based electrolyte containing a small amount of HNO 3 , resulting in the formation of a high-density array of InP nanowalls with a high aspect ratio. These kinds of unique nanostructures have not been obtainable by other methods.In this article, we report size-controlled InP nan...

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Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl

Cited by 76 publications

References 20 publications

Morphological characterization of porous InP superlattices

Morphological characterization of porous InP superlattices

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions

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