Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique

Chien, C. Y.; R., Chang, Y.; Chang, Rong-Seng; Lee, M. S.; Li, P. W.

doi:10.1109/nano.2010.5697842

Cited by 1 publication

(1 citation statement)

References 5 publications

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“…These minibands can be further investigated for photon absorption and carrier transport. Realistically, numerous fabrication QD processes have been reported, [3][4][5][6][7][8][9][10] yet the experimental results only reveal the possibility of fabricating larger QD (diameter or thickness greater than 10 nm). By combining a self-assembled ferritin biotemplate, we have advanced a topdown nanofabrication methodology, damage-free neutral beam etching 11,12) (NBE), which has been applied to fabricate high-quality discoid QDs of sub-10-nm size, [13][14][15][16] which will benefit the investigation of minute-sized QDs.…”

Section: Introductionmentioning

confidence: 99%

Miniband formulation in Ge/Si quantum dot array

Tsai¹,

Lee²,

et al. 2016

Jpn. J. Appl. Phys.

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Enhanced quantum confinement due to nonuniform composition in alloy quantumdots M Z Hossain, N V Medhekar, V B Shenoy et al.In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters.

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