1991
DOI: 10.1016/0039-6028(91)90555-7
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Formation of a well-ordered aluminium oxide overlayer by oxidation of NiAl(110)

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Cited by 557 publications
(397 citation statements)
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“…The native oxide scale is thus composed of Al 2 O 3 consistent with our experimental results. Similar observations were also made by Jaeger et al 46 and Franchy et al 47 in their experimental studies of low-temperature oxygen adsorption on Ni-Al͑111͒ surfaces. In the case of atomic oxidation with and without externally applied electric field ͑10 MV/cm͒, we note that the Ni-O PDF shows a peak at ϳ2.0 Å ͓Fig.…”
Section: Ni-al Substratesupporting
confidence: 86%
“…The native oxide scale is thus composed of Al 2 O 3 consistent with our experimental results. Similar observations were also made by Jaeger et al 46 and Franchy et al 47 in their experimental studies of low-temperature oxygen adsorption on Ni-Al͑111͒ surfaces. In the case of atomic oxidation with and without externally applied electric field ͑10 MV/cm͒, we note that the Ni-O PDF shows a peak at ϳ2.0 Å ͓Fig.…”
Section: Ni-al Substratesupporting
confidence: 86%
“…Such films also turn out to be very clean if compared to single-crystal samples. Well-ordered films of several transition metal-oxides (Ni, Cr, Fe) were prepared by oxidizing the surface region of the corresponding metal single-crystals [10,142], and ordered Al 2 O 3 films were obtained by surface oxidation of NiAl single-crystals [143].…”
Section: Preparation Of Ordered Metal-oxide Surfacesmentioning
confidence: 99%
“…It has been shown that even films with a thickness of just a few Angstroms can exhibit physical properties characteristic of the bulk material (Freund 1995). The traditional method to prepare such films is the oxidation of the native metal (Freund 1995) or an alloy (Jaeger et al 1991;Libuda et al 1994;Bardi et al 1992;Becker et al 1998), although this often results in amorphous or polycrystalline overlayers [e.g., Al oxide on Al (Chen et al 1987;Belton and Schmieg 1988a, b;Chen et al 1992), or Si oxide on Si (Rochet et al 1986;Pantelides et al 1978)] or films with a rather high defect density. This is due to the large mismatch which usually exists between the metal and the oxide lattice [e.g., NiO(100)/Ni(100) (Bäumer et al 1991)].…”
Section: S6mentioning
confidence: 99%
“…This is due to the large mismatch which usually exists between the metal and the oxide lattice [e.g., NiO(100)/Ni(100) (Bäumer et al 1991)]. There are a few examples where well-ordered crystalline films can be obtained in this way [e.g., Cr 2 O 3 (111) on Cr(110) (Kuhlenbeck et al 1992;Rohr et al 1997a, b) or Al 2 O 3 on NiAl(110) (Jaeger et al 1991;Libuda et al 1994) and Ni 3 Al(111) (Bardi et al 1992;Becker et al 1998)].…”
Section: S6mentioning
confidence: 99%