2016
DOI: 10.1088/1757-899x/110/1/012042
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Formation of alpha and beta tantalum at the variation of magnetron sputtering conditions

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Cited by 13 publications
(2 citation statements)
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“…Chapter is partially based on the results of earlier published works [35][36][37], and authors have the permission to re-use it.…”
Section: Acknowledgementsmentioning
confidence: 99%
“…Chapter is partially based on the results of earlier published works [35][36][37], and authors have the permission to re-use it.…”
Section: Acknowledgementsmentioning
confidence: 99%
“…Its structure has been identified as P 4̅2 1 m (113) and results in a 3% lower density (16.3 g cm –3 ) than α-Ta (16.8 g cm –3 ). We note that the very similar space group of P 4 2 / mnm has also been linked to β-Ta . In sputtered thin films, the occurrence of α/β Ta has been linked to the deposition pressure, substrates temperature and substrate or seed/adhesion layer material on which the Ta layer is grown. Although some reports in the literature provide contradictory conclusions, the general consensus seems to be that deposition on amorphous silicon/quartz at low substrate temperatures typically results in β-Ta, while deposition on Mo, Ti, or Cr seed layers at high substrate temperatures results in the formation of α-Ta. While many studies have been devoted to the structure and occurrence of β-Ta, to the best of our knowledge, the properties of (thin film) β-Ta under hydrogen exposure are still unknown. Detailed knowledge of these properties, as well as how the optical transmission/reflection change with exposure to hydrogen, is key when considering the use of β-Ta as a sensing material in a hydrogen sensor.…”
Section: Introductionmentioning
confidence: 99%