Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface

Toyama, Hiroyuki; Nishihira, Atsushi; Yamazato, Masanobu; Higa, Akira; Maehama, Toshiyuki; Ohno, Ryoichi; Toguchi, Minoru

doi:10.1143/jjap.43.6371

Cited by 40 publications

(31 citation statements)

References 14 publications

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“…We have found that the property of Schottky contact was improved by plasma treatment and the details are described in our previous paper [3], [4]. An Al Schottky contact was formed on CdTe(111)Te-face by electron-beam evaporating.…”

Section: Detector Fabrication and Measurementmentioning

confidence: 85%

Analysis of Polarization Phenomenon and Deep Acceptor in CdTe Radiation Detector

Toyama

Higa

Owan

et al. 2006

2006 IEEE Nuclear Science Symposium Conference Record

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High energy-resolution CdTe radiation detectors with Schottky contact show instability with operating time under bias voltage, which is termed as polarization phenomenon. Time stability is one of the important factors for its practical applications. It is considered that this phenomenon is responsible for the deep acceptor level in CdTe bulk. However, the energy position and concentration of the deep acceptor level have been not estimated accurately. We have studied the polarization phenomenon and the parameters of deep acceptor in a Schottky-type CdTe radiation detector. In this paper, we propose a new method which can quantitatively evaluate the parameters of the deep acceptor such as concentration and energy level by measuring the temperature dependence of the current-voltage characteristics of the CdTe radiation detector.

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Section: Detector Fabrication and Measurementmentioning

confidence: 85%

Analysis of Polarization Phenomenon and Deep Acceptor in CdTe Radiation Detector

Toyama

Higa

Owan

et al. 2006

2006 IEEE Nuclear Science Symposium Conference Record

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“…The electrodes structure is: (top, anode) Au/Pt/CdTe/Al/Ti/Au (bottom, cathode). 5 The negative voltage bias is applied to the anode. Due to high quality of the CdTe crystals and presence of Schottky barrier, the measured total leakage current of the dies (including the guard rings) is from 2 to 3 nA at +10 °C and −100 V bias (from 232 to 348 pA/cm 2 ).…”

Section: Cdte Diementioning

confidence: 99%

ART-XC/SRG: status of the x-ray focal plane detector development

Levin¹,

Pavlinsky²,

Akimov³

et al. 2014

SPIE Proceedings

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The Russian Space Research Institute (IKI) has developed CdTe detectors for the focal plane of the ART-XC/SRG instrument. The CdTe crystal has dimensions about 30 × 30 × 1 mm. Top and bottom sides of the detector each contain 48 strips and a guard ring. The ASIC VA64TA1 is connected to the CdTe crystal by AC-coupling for both DSSD sides. This approach allows one to have the same ground level for both electronic parts and to operate detectors with different leakage currents without reconfiguration of the VA64TA1 chips. One CdTe crystal and two ASICs are integrated with thermal sensors and Peltier cooler in a big hybrid integrated circuit. This detector is hermetically sealed by a cover with beryllium window. For ground testing the detector volume is filled with dry nitrogen. Peltier cooler is used during ground tests only. Together with the hermetic case package it allows us to operate the detector at low temperature during all ART-XC telescope development tests. When in space, the detector cooling will be provided by a radiator and heat pipes. Polarization rate temperature and voltage dependences as well as splitting charges between electrodes are being studied. IKI manufactured dozen X-ray cameras with detectors and supporting electronics for EM, QM and flight model of the ART-XC telescope. Spectroscopic and imaging performances of the detectors were tested on the IKI's X-Ray Calibration Facility. Current status of the focal plane detector development and testing will be presented.

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“…This diffusion of indium leads to a lack of electrical isolation of the pixels compromising the detector performance. As an alternative, some manufacturers use aluminium to form a Schottky contact, these have improved stability but suffer from poorer leakage current performance in comparison to indium contacts [13], [14]. 0018-9499/$31.00 © 2012 IEEE Rather than use standard photolithography, it is possible to segment the indium anode using a diamond blade.…”

Section: Edgeless Cadmium Telluride Detectorsmentioning

confidence: 99%

Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Veale

Bell

Jones

et al. 2012

IEEE Trans. Nucl. Sci.

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Segmentation of the anode-side of a CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

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Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface

Cited by 40 publications

References 14 publications

Analysis of Polarization Phenomenon and Deep Acceptor in CdTe Radiation Detector

Analysis of Polarization Phenomenon and Deep Acceptor in CdTe Radiation Detector

ART-XC/SRG: status of the x-ray focal plane detector development

Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

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