Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells

Würz, R.; Marrón, D. Fuertes; Meeder, A.; Rumberg, A.; Babu, S. Moorthy; Schedel‐Niedrig, Th.; Bloeck, Ulrike; Schubert‐Bischoff, P.; Lux‐Steiner, Martha Ch.

doi:10.1016/s0040-6090(03)00261-x

Cited by 66 publications

(33 citation statements)

References 5 publications

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“…diffraction peak can be drawn. Finally, an additional diffraction peak, 103, emerging from the background can be assigned to the mixture of the two main MoSe 2 crystalline orientations, as it has been reported in the literature [48]. Structural surface sensitive analyses were also performed in this set of samples using Raman spectroscopy.…”

Section: Methodsmentioning

confidence: 71%

“…In this way, more light could be shed for instance on the specific location of the MoSe 2 layer with the c-axis growing perpendicular to the Mo surface, which usually is reported to be at the MoSe 2 /absorber interface [48]. Nevertheless, it has been also reported that a MoSe 2 layer could act as buffer layer between the Mo and the absorber, promoting an ohmic contact, and thereby improving the electrical transport.…”

Section: Methodsmentioning

confidence: 99%

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The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

et al. 2016

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Section: Methodsmentioning

confidence: 71%

Section: Methodsmentioning

confidence: 99%

The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

et al. 2016

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“…[140][141][142][143] Wada et al 151 reported the formation of a MoSe 2 layer at the Mo/CIGS interface during the second stage of the three-stage process, yet only under (In,Ga)-rich growth and for substrate temperatures higher than 550 C. They found Na to enhance the formation of MoSe 2 (see also Section 6Á2). MoSe 2 layers were confirmed also in CuGaSe 2 -based solar cells by Würz et al 152 Contrary to the above results, Ballif et al 153 could not detect any intermediate compound within the Mo/CIGS interface.…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 74%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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“…Another, yet different approach for obtaining a clean surface in UHV is the preparation by peel-off [21,26]. In this technique, use is made of an intermediate van-der-Waals compound at the chalcopyrite/Mo [27] interface.…”

Section: Uhv-clean Surfacesmentioning

confidence: 99%

Surface potential of chalcopyrite films measured by KPFM

Sadewasser

2006

Physica Status Solidi (a)

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Atomic force microscopy is widely used to characterize the surface topography of a variety of samples. Kelvin probe force microscopy (KPFM) additionally allows determining images of the surface potential with nanometer resolution. The KPFM technique will be introduced and studies on surfaces of chalcopyrite semiconductors for solar cell absorbers will be presented. It is shown that operation in ultra-high vacuum (UHV) is required to obtain meaningful work function values. Different methods for obtaining UHV-clean surfaces are presented and KPFM studies on these are compared. Surfaces where prepared by in-vacuum deposition, inert-gas transfer, in-vacuum decapping of a protective Se-cap and a peel-off method. Finally, a sputter-annealing cycle also allows to obtain well-suited surfaces for KPFM studies. Employing KPFM, variations in the local surface potential at grain boundaries of polycrystalline CuGaSe2 films were observed. A potential drop indicates the presence of charged defects at grain boundaries. Furthermore, different electronic activity was found for different grain boundaries, as concluded from studies under illumination. Using laterally resolved surface photovoltage, a Cu2−xSe impurity phase could be observed in CuGaSe2.Copyright line will be provided by the publisher 1 Introduction Photovoltaic energy conversion is one route followed in the quest for a sustainable energy supply in the future. Thin film solar cell technologies offer a high cost reduction potential compared to standard silicon wafer technology. With their high power conversion efficiencies on the laboratory scale, thin film solar cells from the Cu-chalcopyrite materials system are a promising candidate for this technology; in fact, pilot production lines have recently been started. Currently, the highest efficiency of nearly 20% is obtained for Cu(In, Ga)Se 2 containing ≈ 30% of Ga [1]. A typical solar cell consists of a metallic Mo layer on a float glass substrate, a polycrystalline p-type Cu-chalcopyrite absorber layer with a typical thickness of 2 µm, a thin buffer layer (typically CdS) and the n-type double layer window (ZnO). A NiAl grid provides the front contact. A wide variety of growth techniques for the chalcopyrite absorber have been studied, including evaporation, sputtering and subsequent rapid thermal processing in chalcogen atmosphere, chemical vapor deposition, metal organic vapor phase epitaxy and electrochemical deposition. In such multilayered structures the various interfaces play a crucial role, as they are prone to contain electronically active defects causing electronic losses in the device. The polycrystalline character of the materials introduces additional effects, as for example varying composition in different grains and grain boundaries [2]. Recently, also compositional variations on the nanometer scale have been proposed [3]. Therefore, studies of surfaces and interfaces are highly important in order to further the understanding of these materials and eventually increase their efficiency towards the theore...

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Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells

Cited by 66 publications

References 5 publications

The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Surface potential of chalcopyrite films measured by KPFM

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Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells

Cited by 66 publications

References 5 publications

The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Surface potential of chalcopyrite films measured by KPFM

Contact Info

Product

Resources

About

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells