Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon

Meirer, Florian; Giubertoni, D.; Demenev, Evgeny; Vanzetti, L.; Gennaro, S.; Fedrizzi, Michele; Pepponi, G.; Mehta, Apurva; Pianetta, P.; Steinhäuser, Georg; Vishwanath, Vinayak; Foad, M.A.; Bersani, M.

doi:10.1063/1.4769446

Cited by 6 publications

(14 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For this analysis, a region far away from any arsenolite crystal was chosen. In the image, a 10 nm silicon oxide layer is clearly visible on the silicon substrate, in line with previously observed SIMS and XPS results [9,10]. This layer clearly associated with atmospheric exposure since it is not observed in the capped sample (Fig.…”

Section: Surface Layer Compositionsupporting

confidence: 89%

“…Here it is important to note that SIMS measures only the arsenic within the wafer, since micro-crystals were removed before analysis due to a routine surface cleaning prior to the measurement. Therefore, the difference in fluence was attributed to the presence of arsenolite micro-crystals [9]. When micro-crystals are gently brushed off from the wafer surface, the dose determined by INAA decreases from 5.2 × 10 15 (S1) to 2.5 × 10 15 at/cm 2 (S1-cleaned), and are then in agreement with SIMS (within experimental uncertainty).…”

Section: Surface Layer Compositionmentioning

confidence: 54%

“…The S1 surface is covered with a distribution of arsenolite microcrystals as reported elsewhere [9,10]. Raman spectroscopy was Fig.…”

Section: Layer Evolution: Kinetics Of As 2 O 3 Micro-crystal Formationmentioning

confidence: 99%

“…Meirer et al recently demonstrated that the thick native oxide observed after high fluence PIII of arsenic in Si originates from atmospheric exposure of the implanted surface [9]. In fact, in situ deposition of a cap layer on the implanted surface prevents further oxidation.…”

Section: Introductionmentioning

confidence: 99%

“…As a possible explanation for those observations the authors suggested that a thin film of amorphous arsenic was deposited following the high fluence PIII. This arsenic layer would then evolve upon atmospheric exposure forming As 2 hand, if annealing is performed before those reactions take place, most of the As can be driven into the Si, explaining in this way the higher retained arsenic fluences often observed on annealed samples [5,6,9]. However, the presence of this amorphous arsenic layer was only proposed based on the high As concentration estimated by SIMS.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Vishwanath

Demenev

Giubertoni

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

a b s t r a c tHigh fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

show abstract

Section: Surface Layer Compositionsupporting

confidence: 89%

Section: Surface Layer Compositionmentioning

confidence: 54%

“…The S1 surface is covered with a distribution of arsenolite microcrystals as reported elsewhere [9,10]. Raman spectroscopy was Fig.…”

Section: Layer Evolution: Kinetics Of As 2 O 3 Micro-crystal Formationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Vishwanath

Demenev

Giubertoni

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

show abstract

Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study

Meirer

Demenev

Giubertoni

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

The evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation and deposition (PIIID) using a non‐pulsed plasma source was studied over a time period of more than one year. The study focused on the effect of arsenolite micro‐crystal formation, enhanced oxidation, and the significant As dose loss from as implanted samples at room temperature. The study was carried out combining analytical evidence from SIMS, XPS, INAA, SEM, and optical microscopy suggesting a two stage process of As dose loss, the first implying arsenolite crystal growth and the second an out‐diffusion. In fact, comparison of samples fabricated using different PIIID parameters showed that crystal growth seems not to be the only process responsible for dose loss. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT

et al. 2018

View full text Add to dashboard Cite

Application of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors, characterization of 3D devices both by SIMS and APT requires sample preparation via trench backfill with α-Si, or other material, via chemical vapor deposition or atomic layer deposition process due to high aspect ratio of test structures. Certain artifacts with adverse impacts on quantitative results encountered in this study are discussed.

show abstract

Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon

Abstract: Structural and electrical investigation of high temperature annealed As-implanted Si crystalsa)High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry J.

Cited by 6 publications

References 22 publications

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study

Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT

Contact Info

Product

Resources

About