2020
DOI: 10.1016/j.nimb.2020.03.021
|View full text |Cite
|
Sign up to set email alerts
|

Formation of Au-Ag alloy nanoparticles in amorphous silicon using sequential ion implantation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 45 publications
0
5
0
Order By: Relevance
“…In our work, the adopted current density is 4.0 μA•cm −2 in order to save the time cost of implantation. Such a current density, in fact, far surpasses those adopted in other works [18,20,21]. Therefore, Ag/SiO 2 sample can reach a higher temperature due to the drastic ion beam heating during the implantation [29].…”
Section: Resultsmentioning
confidence: 85%
See 1 more Smart Citation
“…In our work, the adopted current density is 4.0 μA•cm −2 in order to save the time cost of implantation. Such a current density, in fact, far surpasses those adopted in other works [18,20,21]. Therefore, Ag/SiO 2 sample can reach a higher temperature due to the drastic ion beam heating during the implantation [29].…”
Section: Resultsmentioning
confidence: 85%
“…In a nanocomposite layer are lots of metal NPs that play a key role in the property of device [17]. Depending on the differences in metal ion species, implantation condition, and treatment after implantation, the metal NPs embedded in the nanocomposite layers are also allowed to be hollow [18], rod-like [19], coreshell [20], and alloyed [21]. They are distinctive in morphology and/or composition, and thus, the corresponding devices might possess novel properties.…”
Section: Introductionmentioning
confidence: 99%
“…Many research studies have proven that metal nanocrystals (e.g., Ag, Au, etc.) can be formed directly in silicon and silicon dioxide by ion implantation. Also, for nitride-based charge trap memory with SiO 2 /Si 3 N 4 /SiO 2 storage structure, Si 3 N 4 has a work function of 4.9 eV, and the deeply trapped electrons are not easily detrapped during erasing . Conversely, silver has a work function of 4.26 eV, which can form a suitable trap level that is neither too deep to affect the operating speed nor too shallow to cause charge leakage.…”
Section: Introductionmentioning
confidence: 99%
“…35 This limitation could be overcome by the synthesis of Au@Ag bimetallic NPs due to the possibility of optimizing the plasmon absorption energy to enhance the luminescence by boosting the suitable synergistic phenomenon. 35,36 The formation of Au@Ag NPs via ion implantation has been investigated, 37,38 but little attention has been given to their plasmonic effect on the spectroscopic properties of RE ions. In this work, the plasmonic effects of Au@Ag NPs in a Er 3+ -doped GeO 2 -PbO glass were investigated, which promoted considerable boosting for the emission at 1.53 μm (NIR).…”
Section: ■ Introductionmentioning
confidence: 99%
“…The formation of Au@Ag NPs via ion implantation has been investigated, , but little attention has been given to their plasmonic effect on the spectroscopic properties of RE ions. In this work, the plasmonic effects of Au@Ag NPs in a Er 3+ -doped GeO 2 -PbO glass were investigated, which promoted considerable boosting for the emission at 1.53 μm (NIR).…”
Section: Introductionmentioning
confidence: 99%