Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

Frantskevich, N.V.; Mazanik, A.V.; Frantskevich, A.V.; Kołtunowicz, Tomasz N.

doi:10.12693/aphyspola.120.105

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“…[1] the possibility to form an array of cone--shaped defects on the silicon wafer surface after the hydrogen plasma treatment was demonstrated. However, the nature and formation mechanism for these defects are still ambiguous.…”

Section: Introductionmentioning

confidence: 99%

Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface

et al. 2014

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The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 cm −1 corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 cm −1 and simultaneous disappearance of 4158 cm −1 line. No such eect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 cm −1 , which can be associated with molecular hydrogen.

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Section: Introductionmentioning

confidence: 99%