Formation of (CoxNi1−x)Si2 ternary silicide by thermal annealing of evaporated Co/Ni thin films on Si substrate

Sedrati, C.; Bouabellou, A.; Derafa, A.; Boudissa, M.; Benazzouz, C.; Hammoudi, A.

doi:10.1016/j.vacuum.2015.03.031

Cited by 2 publications

(1 citation statement)

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“…Recently, a great interest has been given to ternary silicide Co x Ni 1−x Si 2 because of its good electrical conductivity (resistivity of 16 µΩ • cm to 20 µΩ • cm) and, in addition to that, its formation and growth temperature is lower than that of CoSi 2 and its thermal stability is better than that of NiSi [17]. Moreover, Co x Ni 1−x Si 2 promotes the safeguarding of the crystallographic structure of CoSi 2 with virtually the same lattice parameter.…”

Section: Introductionmentioning

confidence: 99%

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Sedrati

Bouabellou

Kabir

et al. 2020

Materials Science-Poland

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In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

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Section: Introductionmentioning

confidence: 99%