Formation of cubic-AlN layer on MgO(1 0 0) substrate

Okubo, Soichiro; Shibata, Noriyoshi; Saito, Tomohiro; Ikuhara, Yuichi

doi:10.1016/s0022-0248(98)00329-7

Cited by 24 publications

(14 citation statements)

References 11 publications

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“…The synthesis of high‐quality AlN films in a cost‐efficient manner remains a difficult task due to the binary nature of the material as well as the technological demands, such as fast growth rates, technology‐compatible substrates, and wafer‐scale deposition. These conditions rule out the utilization of molecular beam epitaxy or metal organic vapor phase epitaxy along with the choice of the substrates naturally having close lattice constants or similar thermal expansion coefficients, such as SiC, Al 2 O 3 , or MgO . Among more technologically suitable substrates, metallic surfaces promoting the lateral migration of atoms, for instance, Pt(111), Al(111), Mo(110), or even graphene and silicon surfaces, can be highlighted.…”

Section: Introductionmentioning

confidence: 99%

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Solonenko

Schmidt

Stoeckel

et al. 2019

Physica Status Solidi (b)

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Hexagonal aluminium nitride (AlN) thin films prepared by the reactive magnetron sputtering method usually undergo post-growth annealing treatment aimed at the improvement of crystalline quality as a principal step for their performance as piezoelectric transducers in micro-electro-mechanical systems. Herein, the post-growth annealing of AlN films deposited on Si (111) is investigated by Raman and Fourier transform infrared spectroscopies, X-ray diffraction, and scanning probe microscopies. The thermally treated films show a positive trend in stress relaxation via annealing up to 1200 C; however, it is accompanied by a dewetting of the quasi-epitaxial layer and the formation of the cubic AlN phase. The critical role is played by the AlN/Si interface being sensitive to oxidation via interstitial oxygen in Si wafers. The piezoelectric performance of the AlN/Si system is found to be inversely proportional to the post-growth annealing temperature.

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Section: Introductionmentioning

confidence: 99%

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Solonenko

Schmidt

Stoeckel

et al. 2019

Physica Status Solidi (b)

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“…Scientists have tried to grow high-quality group III-nitride films on MgO by MBE or radiofrequency magnetron sputtering technology [96][97][98][99][100][101]. However, due to the high Mg partial pressure of MgO, serious interfacial reaction will take place between the film and the substrate, which severely deteriorates the quality of group IIInitride films [96][97][98][99]. Meanwhile, when growing the cubic IIInitrides by MBE, hexagonal III-nitrides will be mixed into the cubic films, and therefore its phase purity of the as-grown film is damaged [101].…”

Section: Group Iii-nitride Films On Mgo Substrates By Pldmentioning

confidence: 99%

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

130

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“…For instance, cubic crystalline substrates such as cubic-GaN/MgO(100) [13], MgO(100) [13,15], SiC/Si [14], MgO(111) [15], and Si(100) [16,17] have been employed for the deposition by molecular beam epitaxy(MBE). And the depositions by vacuum arc deposition [18], pulse laser deposition (PLD) [10,11], and dual-cathode DC magnetron sputtering have employed Si(100), Si(100) and (111), and TiN/MgO(001), respectively.…”

Section: Introductionmentioning

confidence: 99%

Structural Evaluation of β-AlN Films Grown on Sapphire (0001) Substrates

Yoshida

Ueda

Daio

et al. 2015

Trans. Mat. Res. Soc. Japan

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-AlN thin films with different thickness were grown on sapphire(0001) substrates with a smooth surface in a nitrogen atmosphere by pulsed laser deposition using a sintered AlN target, and their films were evaluated by X-ray diffraction and transmission electron microscopy. Zincblend-type -AlN with a lattice constant of 7.89 Å was epitaxially grown on sapphire(0001) near the interface with the substrate. The electron diffraction patterns of its area along the close-packed planes exhibited streaking spots caused by dislocation defects. On the other hand, with increasing film thickness, the upper area of the AlN thin films became polycrystalline, and simultaneously the streaking disappeared there. Dislocation defects near the interface might be due to a large lattice mismatch or a shift in the close-patching sequence, and they disappears in the polycrystalline area.

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Formation of cubic-AlN layer on MgO(1 0 0) substrate

Cited by 24 publications

References 11 publications

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Structural Evaluation of β-AlN Films Grown on Sapphire (0001) Substrates

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