Formation of CuIn1−xAlxSe2 thin films studied by Raman scattering

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

“…Their values varied also nonlinearly from {a = 5.49Å, c = 11.02Å} for CuInS 2 to {a = 5.30Å, c = 10.36Å} for CuAlS 2 . The same nonlinear behavior was observed in previous work focused on thin films of a similar chalcopyrite, CuIn 1−x Al x Se 2 [21][22][23][24]. Reddy at al.…”

“…(1) and because the mass of the C VI atom in all CuIn 1−x Al x S 2 crystals remains the same, the force constant k must be slightly changed during gradual substitution of aluminum for indium. In a previous paper [24], where the dependence of A 1 mod frequency of similar chalcopyrite CuIn 1−x Al x Se 2 was studied, it was shown that A 1 mod frequency is also nonlinear in Al/(In + Al) ratio but seems to be nearly linearly dependent on the lattice parameters. That result could just be coincidental, but this is definitely not true in the case of the CIAF thin films.…”

Microstructural and morphological properties of sputtered Cu(In, Al)Se2 thin films for solar cell applications

“…The peak at 151 cm À 1 is attributed to the appearance of an ordered defect compound phase of Cu(In, Al) 3 Se 5 [10]. The most intense line at 174 cm À 1 could be assigned to the A 1 mode for chalcopyrite-type CIAS thin films [12]. Additional peaks appeared at 212 cm À 1 , 225 cm À 1 and 259 cm À 1 can be regarded as the B 2 , B 1 and E modes of CIAS, respectively [10].…”

Study of the Al-grading effect in the crystallisation of chalcopyrite CuIn1−xAlxSe2 thin films

“…A distinction is made between the lower range 400ºC to 500ºC and the higher range 520ºC to 550ºC. 400ºC is chosen as the minimum temperature required to form CIS [10,11]; while temperatures greater than 520ºC are necessary to crystallise CIAS [10,12]. Absorber thin films of 1.2 ± 0.1 μm average thickness were obtained after the selenisation processes.…”