2011
DOI: 10.1016/j.jallcom.2010.12.180
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Formation of CuO nanorods and their bundles by an electrochemical dissolution and deposition process

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Cited by 72 publications
(42 citation statements)
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“…All emission bands with different peak wavelengths shown in Fig. 9 were previously reported for CuO [36][37][38][39][40]. The three strong emission peaks located at 489 (2.54 eV), 505 (2.46 eV) and 525 nm (2.37 eV) are due to the band edge emission from + 1 to the new sublevels at 300 K [41][42][43][44][45], or maybe due to the defects present in the CuO nanostructures [46].…”
Section: Optical Propertiessupporting
confidence: 62%
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“…All emission bands with different peak wavelengths shown in Fig. 9 were previously reported for CuO [36][37][38][39][40]. The three strong emission peaks located at 489 (2.54 eV), 505 (2.46 eV) and 525 nm (2.37 eV) are due to the band edge emission from + 1 to the new sublevels at 300 K [41][42][43][44][45], or maybe due to the defects present in the CuO nanostructures [46].…”
Section: Optical Propertiessupporting
confidence: 62%
“…The sub-levels could be developed because of imperfection levels due to the interaction of two excitons or the 3 D-1 D splitting in Cu+(3d 9 4s 2 ) [41,43]. Generally, the green emission bands extending from 489 nm (2.54 eV), 525 nm (2.37 eV) and 585 nm to 625 nm (1.99 eV) are related to deep level defects of CuO [37,39]. A significant increasing photoluminescence (PL) intensity at the emission band centered at about 505 (2.46 eV) was observed (Fig.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…9. Emission peaks at 352 nm and 462 nm were observed in the sample, which indicated CuO emission [27,28]. The main emission peak observed around 352 nm is attributed due to the near-band-edge (NBE) UV emission.…”
Section: Photoluminescence Studiesmentioning
confidence: 91%
“…Among them, copper oxide (CuO), as a p-type metal-oxide semiconductor with narrow band gap of 1.2-2 eV, makes an attractive choice for alternative materials to serve as lithium-ion batteries (LIBs) [4], gas sensors [5], photodetectors [6], solar cells [2], heterogeneous catalyst [7], bio-sensors [8], magnetic storage media [9], field emissions [10], etc. Up to now, various methods have already been developed and used for the fabrication of nanowires, as well as for their large-scale production, including hydrothermal method [11], thermal oxidation method [12], sol-gel method [13], wet-chemical method [14], electrochemical deposition method [15] and anodization method [4]. In particular, electrochemical method is widely adopted to prepare nanowires, which possesses the advantages of simplicity, low-temperature operation process and viability of commercial production [3].…”
Section: Introductionmentioning
confidence: 99%
“…The samples were sonicated for 1 h before the deposition process. Electrode separations between the copper anode and stainless steel cathode of 6 mm, 8 mm and 10 mm, direct-current (DC) voltages of 10 V to 30 V and deposition times of 1 h to 4 h were used, with a polyethylene terephthalate (PET) sheet (5 × 20 × 0.1 mm) attached to the cathode [17]. The as-deposited samples were then dried in air at room temperature.…”
Section: Methodsmentioning
confidence: 99%