Formation of Dislocations in the Process of Impurity Diffusion in GaAs

Khludkov, S. S.; Prudaev, I. А.; Толбанов, О. П.; Ивонин, И. В.

doi:10.1007/s11182-022-02596-3

Cited by 1 publication

(2 citation statements)

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“…[ 19,20 ] Other experimental data show that Fe diffusion in GaAs increases the dislocation density by more than an order of magnitude. [ 21 ]…”

Section: Methods Of Researchmentioning

confidence: 99%

“…[19,20] Other experimental data show that Fe diffusion in GaAs increases the dislocation density by more than an order of magnitude. [21] The mesh spacing along the X coordinate was varied: closer to the inhomogeneity region, it decreased to ΔX values that were much lower than the dimensions of the inhomogeneity selected. Closer to the periphery of the structures, the step increased to 2 μm.…”

Section: Simulationmentioning

confidence: 99%

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Microplasma Breakdown in GaAs‐Based Avalanche S‐Diodes Doped with Deep Fe Acceptors

Prudaev

Kopyev

Oleinik

2023

Physica Status Solidi (b)

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The article reports investigations into the microplasma breakdown in GaAs‐based avalanche S‐diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a reverse I–V curve with “soft” avalanche breakdown. It proposes 2D single microplasma models and calculates I–V curves of diodes with a deep impurity during microplasma breakdown. By comparing experimental and calculation data, authors propose an explanation for the effect of current limitation during avalanche breakdown. The effect is associated with capture of avalanche holes at negatively charged Fe centers, which enhances the depletion region and minimizes the maximum electric field in a reverse‐biased p–n junction of an S‐diode.

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“…[ 19,20 ] Other experimental data show that Fe diffusion in GaAs increases the dislocation density by more than an order of magnitude. [ 21 ]…”

Section: Methods Of Researchmentioning

confidence: 99%