Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers

Kudrin, A. V.; Lesnikov, V. P.; Павлов, Д. А.; Usov, Yu. V.; Danilov, Yu. A.; Дорохин, М. В.; Vikhrova, O. V.; Milin, V.E.; Kriukov, R. N.; Kuznetsov, Yu. M.; Trushin, V. N.; Соболев, Н. А.

doi:10.1016/j.jmmm.2019.165321

Cited by 11 publications

(11 citation statements)

References 12 publications

(26 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For the structures 200-17, 180-25, 200-25 and 250-25 the E 1 peak has a clear blueshift (the inset of figure 9). The blueshift of the E 1 peak position with the Fe concentration was observed earlier for the MBE and PLD-grown (Ga,Fe)Sb [16,27] and (In,Fe)Sb layers [5,6]. The close to linear resistivity dependence in these coordinates at the temperatures below about 65 K indicates that the conductivity is provided by the transfer of electrons through the electronic states localized close to the Fermi level [28].…”

Section: Structural and Optical Propertiessupporting

confidence: 69%

See 1 more Smart Citation

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Kudrin

Lesnikov

Danilov

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 ºC are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 ºC revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The x-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance (MR) was observed in the conductive layers up to room temperature (RT). MR measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 ºC are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least RT in case of the conductive layer obtained at 200 ºC. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom.

show abstract

Section: Structural and Optical Propertiessupporting

confidence: 69%

“…The GaAs and GaAs:Fe layers were grown by a pulsed laser deposition (PLD) in a vacuum on semi-insulating (001) GaAs substrates [2,5,12,16]. The Fe content was set by the technological parameter Y Fe = t Fe / (t Fe + t GaAs ), where t Fe and t GaAs are the ablation times of the Fe and GaAs targets, respectively.…”

Section: Methodsmentioning

confidence: 99%

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Kudrin

Lesnikov

Danilov

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Если сопоставить полученные результаты с опубликованными нами ранее данными по p−i−n структуре, содержащей слои разбавленных магнитных полупроводников p-GaFeSb и n-InFeSb (с концентрацией Fe около 10 at.%), разделенные спейсером GaAs [11], то можно полагать, что более значительное легирование железом соединений GaFeSb, InFeAs и InFeSb способствует повышению температурного диапазона сохранения эффекта ОМС. Сам факт наблюдения влияния ферромагнитных свойств слоев на транспорт носителей в диоде свидетельствует о том, что граница раздела высоколегированных железом p-и n-областей остается достаточно совершенной.…”

Section: гальваномагнитные свойства диодных структур с двумя слоями ферромагнитных полупроводниковunclassified

“…Ранее нами были опубликованы предварительные результаты по изучению гальваномагнитных свойств p−i−n-структур, содержащих слои разбавленных магнитных полупроводников p-GaFeSb и n-InFeSb, разделенные спейсером GaAs [11]. Для изготовления структур использовался метод импульсного лазерного нанесения (содержание железа в слоях составляло 10 at.%).…”

Section: Introductionunclassified

“…Для изготовления структур использовался метод импульсного лазерного нанесения (содержание железа в слоях составляло 10 at.%). Обнаружено уменьшение сопротивления такого p−i−n-диода на 0.15−0.2% во внешнем магнитном поле (±3600 Oe) при температурах от 10 до 70 K [11].…”

Section: Introductionunclassified

See 1 more Smart Citation

Диодные гетероструктуры с ферромагнитными узкозонными полупроводниками A-=SUP=-3-=/SUP=-FeB-=SUP=-5-=/SUP=- разного типа проводимости

Лесников¹,

Ведь²,

Вихрова³

et al. 2021

Физика Твердого Тела

View full text Add to dashboard Cite

Diode structures with ferromagnetic narrow-gap semiconductors A3FeB5 as only p-region (p-GaFeSb/n-InGaAs), only n-region (n-InFeSb/p-InGaAs), p- and n-regions (p-GaFeSb/n-InFeSb, p-GaFeSb/n-InFeAs) for p-n junction were fabricated by pulsed laser deposition in vacuum. The composition of ferromagnetic semiconductor layers and their thicknesses, determined by X-ray photoelectron spectroscopy, generally correspond to the technological data for diode structures. In particular, the thickness of the GaFeSb layer is 25–30 nm, and the thickness of the InFeAs and InFeSb layers is 35–40 nm. The iron content in InFeSb ranges from 25 to 35 at.%. The GaFeSb layer contains from 15 to 41 iron at. %, and the InFeAs layer - 35 iron at. %. The chemical analysis of the structures revealed the presence of chemical bonds Fe-As (Sb), In-Fe and Fe-Ga. Therefore, it can be assumed that Fe atoms in the fabricated structures can substitute for elements of groups III and V simultaneously. All structures exhibit the effect of negative magnetoresistance at sufficiently low observation voltages of the effect (up to 50 mV), in low magnetic fields (up to 3600 Oe), and at high measurement temperatures. For GaFeSb/InFeSb, GaFeSb/InFeAs diodes, negative magnetoresistance was first observed at room temperature. The hysteresis form of the dependences of the resistance on the magnetic field suggests the effect of the ferromagnetic properties of the layers of narrow-gap semiconductors on the transport of carriers in the structures.

show abstract

Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

Mekuye,

Atnafu,

Yibeltal

et al. 2024

Nano Select

View full text Add to dashboard Cite

Diluted magnetic semiconductors have become a research area in the past few years due to the importance of new technology, spintronics devices, and green technology to withstand rising global temperatures. Both n‐type and p‐type diluted magnetic semiconductors are used in pairs for perfect performance, especially for p‐n junction diodes, the p‐d Zener model, GMR, and TMR spintronics devices. The main challenge for some researchers is to find a ferromagnetic diluted magnetic semiconductor with a Curie temperature greater than room temperature for both n‐type and p‐type ferromagnetic diluted semiconductors, but this study has solved this problem. In the present study, the ferromagnetic properties of an n‐type gallium iron antimonide diluted semiconductor have been studied using the Hamiltonian model without applying an external magnetic field, electric field, or chemical potential. We have formulated a Hamiltonian model in the system, considering the application of the green formalism function and the transformation of Holstein–Primakaff. The Curie temperature, dispersion, number of magnons, reduced magnetization, and specific heat capacity of ferromagnetic magnons of the n‐type (Ga, Fe)Sb formula are formulated. The Curie temperature versus concentration graph is plotted, and the specific heat capacity and magnetization versus temperature graphs are plotted. In this study, a surprising situation is that the Curie temperature of n‐type diluted magnetic semiconductor is investigated above room temperature, which is 330.4 K. The ferromagnetic properties of appear up to 330.4 K, which is able to play a major role in spintronic and next‐generation green nanotechnology devices.

show abstract

Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers

Cited by 11 publications

References 12 publications

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Диодные гетероструктуры с ферромагнитными узкозонными полупроводниками A-=SUP=-3-=/SUP=-FeB-=SUP=-5-=/SUP=- разного типа проводимости

Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

Contact Info

Product

Resources

About