2004
DOI: 10.1016/j.tsf.2004.02.058
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Formation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2 (001) substrate

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Cited by 9 publications
(2 citation statements)
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“…1,2) Possible application of high refractive semiconducting silicides to high index contrast photonic crystals has been proposed. 8,9) Reports on electroluminescence at 1.5-1.6 µm, 10,11) strong photoluminescence at 1.54 µm, 12) as well as publications on advanced β-FeSi 2 based materials as rodlike, 13) nanodots, 14,15) nanowires, 16,17) and nanocomposites 18,19) increase possibilities of the β-iron disilicide utilizations.…”
Section: Introductionmentioning
confidence: 99%
“…1,2) Possible application of high refractive semiconducting silicides to high index contrast photonic crystals has been proposed. 8,9) Reports on electroluminescence at 1.5-1.6 µm, 10,11) strong photoluminescence at 1.54 µm, 12) as well as publications on advanced β-FeSi 2 based materials as rodlike, 13) nanodots, 14,15) nanowires, 16,17) and nanocomposites 18,19) increase possibilities of the β-iron disilicide utilizations.…”
Section: Introductionmentioning
confidence: 99%
“…However, investigation of the thermal properties of β-FeSi 2 thin films and nanowires have been limited. The growth of thin film has been reported and investigated by ultra-high-vacuum systems [14], but the synthesis of nanowires is still scarce [15]. Watanabe et al have reported on the growth of epitaxial β-FeSi 2 thin film by several epitaxy techniques and molecular beam epitaxy, and the study of their Seebeck coefficient and electrical conductivity [16].…”
mentioning
confidence: 99%