Formation of GaAs by annealing of two-layer Ga-As electrodeposits

Kozlov, V. M.; Bozzini, Benedetto; Bicelli, L. Peraldo

doi:10.1016/j.jallcom.2004.01.067

Cited by 7 publications

(4 citation statements)

References 19 publications

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“…Analogous annealing experiments analyzed with Raman yielded a similarly high critical annealing temperature (Supporting Information, Figure S6). The measured high threshold temperature necessary for metallurgical alloying of As(s) and Ga(l) into c-GaAs(s) is in accord with previous reports on purposely annealing As and Ga films ,− and suggest that the data in Figures and obtained far below 200 °C cannot be explained by a simple annealing effect.…”

Section: Resultssupporting

confidence: 90%

“…The work presented here not only represents an explicit demonstration of an ec-LLS process for GaAs but also provides insight to rationalize the existing GaAs electrodeposition literature. Most reports indicate that coelectrodeposition of Ga and As from aqueous electrolytes cannot yield c-GaAs without subsequent annealing at high temperatures ( T ≥ 250 °C). ,− Typically, the net product at room temperature of coelectrodeposition of Ga and As is an amorphous, physical mixture of Ga and As. However, select reports do indicate some level of crystallinity in GaAs(s) from Ga and As coelectrodeposition at mild temperatures. ,, In coelectrodeposition, it is possible that microscopic Ga(l) droplets are formed initially that could then facilitate some type of ec-LLS process as described here.…”

Section: Discussionmentioning

confidence: 99%

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Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Fahrenkrug

Maldonado

2012

J. Am. Chem. Soc.

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Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements that illustrated the interdependences of applied potential, concentration of dissolved As(2)O(3), and electrodeposition temperature on the quality of the resultant c-GaAs(s). Raman spectra indicated the composition of the resultant film was strongly dependent on both the electrodeposition temperature and dissolved concentration of As(2)O(3) but not to the applied bias. For electrodepositions performed either at room temperature or with high (≥0.01 M) concentrations of dissolved As(2)O(3), Raman spectra of the electrodeposited films were consistent with amorphous As(s). X-ray diffractograms of As(s) films collected after thermal annealing indicated metallurgical alloying occurred only at temperatures in excess of 200 °C. Optical images and Raman spectra separately showed the composition of the as-electrodeposited film in dilute (≤0.001 M) solutions of dissolved As(2)O(3)(aq) was pure c-GaAs(s) at much lower temperatures than 200 °C. Diffractograms and transmission electron microscopy performed on as-prepared films confirmed the identity of c-GaAs(s). The collective results thus provide the first clear demonstration of an electrochemical liquid-liquid-solid (ec-LLS) process involving a liquid metal that serves simultaneously as an electrode, a solvent/medium for crystal growth, and a coreactant for the synthesis of a polycrystalline semiconductor. The presented data serve as impetus for the further development of the ec-LLS process as a controllable, simple, and direct route for technologically important optoelectronic materials such as c-GaAs(s).

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Section: Resultssupporting

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Fahrenkrug

Maldonado

2012

J. Am. Chem. Soc.

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“…Instead of codepositing Ga and As, sequential deposition of Ga and As layers in aqueous solutions has also been used at room temperature. , In these studies, Ga was deposited in 5 M KOH, and As was deposited in 7 M HCl sequentially. The as-deposited Ga–As bilayer films were annealed in a vacuum furnace at 80–190 °C or under N 2 atmosphere at 450 °C to obtain crystalline GaAs films.…”

Section: Electrochemical Synthesis Of Photocathodesmentioning

confidence: 99%

Electrochemical Synthesis of Photoelectrodes and Catalysts for Use in Solar Water Splitting

et al. 2015

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This review focuses on introducing and explaining electrodepostion mechanisms and electrodeposition-based synthesis strategies used for the production of catalysts and semiconductor electrodes for use in water-splitting photoelectrochemical cells (PECs). It is composed of three main sections: electrochemical synthesis of hydrogen evolution catalysts, oxygen evolution catalysts, and semiconductor electrodes. The semiconductor section is divided into two parts: photoanodes and photocathodes. Photoanodes include n-type semiconductor electrodes that can perform water oxidation to O2 using photogenerated holes, while photocathodes include p-type semiconductor electrodes that can reduce water to H2 using photoexcited electrons. For each material type, deposition mechanisms were reviewed first followed by a brief discussion on its properties relevant to electrochemical and photoelectrochemical water splitting. Electrodeposition or electrochemical synthesis is an ideal method to produce individual components and integrated systems for PECs due to its various intrinsic advantages. This review will serve as a good resource or guideline for researchers who are currently utilizing electrochemical synthesis as well as for those who are interested in beginning to employ electrochemical synthesis for the construction of more efficient PECs.

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“…The obtained film was n-type semiconductor. Kozlov et al [79] synthesized GaAs films by heat treatment of individually deposited Ga and As layers. The single layers were electrodeposited from alkaline Ga and acidic As solutions.…”

Section: Gallium Arsenidementioning

confidence: 99%

Electrochemical Synthesis of Silicon and Gallium Arsenide Photovoltaic Thin Films: A Critical Review and a Novel Approach

Bakkar

2020

MSF

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This paper presents, firstly, an overview of results arisen worldwide on semiconductive thin films used in photovoltaic (PV) cells as a function of time and efficiency. Secondly, the paper demonstrates the electrodeposition of silicon and gallium arsenide films suggested for PV cells, with a focus on electrodeposition from ionic liquids. Ionic liquids, due to their wide electrochemical window, are used for the electrodeposition of elements and compounds impossible to be electrodeposited from aqueous solutions. Finally, a new approach, referred to a recent patent by the author, is illustrated to facilitate the practical electrodeposition of semiconductors from ionic liquids that can be suggested for industrial applications.

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Formation of GaAs by annealing of two-layer Ga-As electrodeposits

Cited by 7 publications

References 19 publications

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Electrochemical Synthesis of Photoelectrodes and Catalysts for Use in Solar Water Splitting

Electrochemical Synthesis of Silicon and Gallium Arsenide Photovoltaic Thin Films: A Critical Review and a Novel Approach

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