Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Tsatsul’nikov, A. F.; Krestnikov, I. L.; Lundin, W. V.; Sakharov, A. V.; Карташова, А. П.; Usikov, A. S.; Alfërov, Zh. I.; Ledentsov, N. N.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.; Soshnikov, I. P.; Litvinov, D.; Rosenauer, A.; Gerthsen, D.; Plaut, A. S.

doi:10.1088/0268-1242/15/7/318

Cited by 17 publications

(8 citation statements)

References 18 publications

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“…The first observations were from As ion implanted layers of GaN [1], similar results have been obtained later in arsenic doped GaN films grown by MOVPE [9,11,12]. Recently we have demonstrated very strong blue emission at room temperature in As-doped GaN layers grown by MBE on sapphire substrates using both arsenic dimers and tetramers [13,14].…”

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confidence: 58%

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Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System

Новиков

Winser

et al. 2001

phys. stat. sol. (b)

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We have investigated the temperature dependence of the transition from single phase films of GaN 1--x As x to phase separated layers, which show regions of hexagonal [0001] oriented GaN, cubic [111] oriented GaAs and hexagonal [0001] oriented GaN 1--x As x . We see a strong temperature dependence of the arsenic flux at which GaAs inclusions are first observed. Finally the intensity of blue emission observed in As-doped GaN samples decreases strongly with decreasing growth temperature. IntroductionThere is now considerable interest in the N-rich side of the GaNAs system [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. There are two main reasons, which motivate such studies; the large negative bowing in the band gap for GaNAs solid solutions and strong blue room temperature emission from arsenic doped GaN. However, data on the miscibility gap at this end of the phase diagram is largely absent from the literature. GaN 1--x As x alloys at the N-rich end of the phase diagram have been grown by metalorganic vapour phase epitaxy (MOVPE) [8,9] and by molecular beam epitaxy (MBE) [6,7,10]. For both techniques, it is difficult to obtain a high concentration of As in the alloy before phase separation occurs. The highest concentrations reported in MBE layers are x $ 0.26% [6,7] grown at 750 C and x $ 1% [10] at 500 C, respectively. This suggests that the solubility limit may be a function of temperature.Several authors have reported blue emission from As-doped GaN. The first observations were from As ion implanted layers of GaN [1], similar results have been obtained later in arsenic doped GaN films grown by MOVPE [9,11,12]. Recently we have demonstrated very strong blue emission at room temperature in As-doped GaN layers grown by MBE on sapphire substrates using both arsenic dimers and tetramers [13,14]. The intensity of the blue emission at about 2.6 eV from the As-doped samples is more than an order of magnitude stronger than the band edge emission in undoped GaN samples and can be seen in normal lighting.The aim of this paper is to discuss the temperature dependence of the miscibility gap in N-rich side of the Ga-N-As system and the influence this has on the properties of the films.

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confidence: 58%

“…Introduction There is now considerable interest in the N-rich side of the GaNAs system [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. There are two main reasons, which motivate such studies; the large negative bowing in the band gap for GaNAs solid solutions and strong blue room temperature emission from arsenic doped GaN.…”

mentioning

confidence: 99%

Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System

Новиков

Winser

et al. 2001

phys. stat. sol. (b)

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“…This was first seen in a study, that involved the implantation of various ion species into GaN performed by Pankove [1]. Arsenic implantation resulted in a characteristic luminescence band centred at 2.58 eV and similar results have since been reported for As doping of GaN layers in metal-organic vapour phase epitaxy (MOVPE) [2,3] and plasma-assisted molecular beam epitaxy (PA-MBE) [4,5]. Theoretical models predict, that As atoms replacing the Ga atoms in the GaN lattice are responsible for the blue emission from As-doped GaN [6].…”

Section: Introductionsupporting

confidence: 53%

Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy

Foxon¹,

Новиков²,

Li³

et al. 2002

phys. stat. sol. (a)

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“…Such insertions have already enabled gain in the green spectral range in InGaN/GaN structures [79]. The addition of arsenic to this system [86] may help to shift the PL wavelength towards the red spectral range. In this case optoelectronic devices for the whole visible range will be possible using the same material system.…”

Section: Further Prospectsmentioning

confidence: 99%

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Krestnikov

Ledentsov

Hoffmann

et al. 2001

phys. stat. sol. (a)

103

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Ultrathin insertions of a narrow band-gap material in wide band-gap matrices represent a challenging medium in view of aspects of growth phenomena, unique optical properties, and non-trivial approaches for structural characterization. In a very general case ultrathin submonolayer insertions may form arrays of islands due to the principally discrete nature of the growth front. If the islands are large enough, these islands may act as locally formed quantum well (QW) insertions. If, however, the islands' size is comparable to the Bohr radius and the band-gap difference between the insert and the matrix material is large enough, quantum dots (QD) are formed. Realization of the first or the second regime depends on the surface properties of the substrate and the deposit, particularly, on the tensors of the intrinsic surface stress of both materials and on the lattice mismatch. In this work we consider in detail the case of ultrathin CdSe insertions in wide gap ZnMgSSe matrices: that the nominal thickness is chosen below the critical thickness for threedimensional (3D) island formation. We give an overview of the experimental results available for these structures obtained by submonolayer or about-one monolayer CdSe depositions. A comparison with similar phenomena observed in conventional III-V and III-N systems is given and possible growth scenarios are discussed. We also discuss practical device applications of the structures based on ultrathin insertions for non-traditional devices. Examples of resonant waveguiding and lasing in edge geometry, of surface emitting lasers with low finesse cavities, and of broad-miniband high-frequency Esaki-Tsu anti-dot superlattices are given.

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Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Cited by 17 publications

References 18 publications

Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System

Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System

Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

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