Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Kovačević, Ivana; Pivac, Branko; Dubček, Pavo; Zorc, Hrvoje; Radić, Nikola; Bernstorff, Sigrid; Campione, Marcello; Sassella, A.

doi:10.1016/j.apsusc.2006.06.048

Cited by 7 publications

(4 citation statements)

References 19 publications

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“…Similar island formation due to thermal assistance was reported by Kovacevic. 23 This effect has also been seen in other systems when mass transport under strain from the growing layer resulted in 3D islanding. [24][25][26][27] The side facets of the island are at angles of 29.3 to the (111) growth plane, which corresponds to {113} surfaces.…”

Section: Growth Mechanism On (111)mentioning

confidence: 55%

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Dobbie¹,

Myronov²,

Leadley³

2013

Journal of Applied Physics

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Epitaxial growth of Ge on Si has been investigated in order to produce high quality Ge layers on (110)- and (111)-orientated Si substrates, which are of considerable interest for their predicted superior electronic properties compared to (100) orientation. Using the low temperature/high temperature growth technique in reduced pressure chemical vapour deposition, high quality (111) Ge layers have been demonstrated almost entirely suppressing the formation of stacking faults (< 107 cm−2) with a very low rms roughness of less than 2 nm and a reduction in threading dislocation density (TDD) (∼ 3 × 108 cm−2). The leading factor in improving the buffer quality was use of a thin, partially relaxed Ge seed layer, where the residual compressive strain promotes an intermediate islanding step between the low temperature and high temperature growth phases. (110)-oriented layers were also examined and found to have similar low rms roughness (1.6 nm) and TDD below 108 cm−2, although use of a thin seed layer did not offer the same relative improvement seen for (111).

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Section: Growth Mechanism On (111)mentioning

confidence: 55%

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Dobbie¹,

Myronov²,

Leadley³

2013

Journal of Applied Physics

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show abstract

“…Along with TEM, there are other useful techniques that can provide information regarding the structural properties of NCs. One of them is grazing incidence small x-ray scattering (GISAXS), which is a non-destructive technique for structural characterization of NCs supported on a substrate [31] and NCs embedded in a matrix [32]. The Si-NCs formed in the super-lattice structures have been successfully studied by means of GISAXS despite the fact that the difference in electronic density (on which GISAXS is very sensitive) between Si-NCs and silicon oxide is very small [33].…”

Section: Properties and Characterizationmentioning

confidence: 99%

An Outlook on Silicon Nanocrystals for Optoelectronics

Capan

Carvalho

Coutinho

2016

JGE

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Silicon nanocrystals have emerged as promising material components which extend the realm of the application of its bulk counterpart beyond traditional boundaries. Over the last two decades of research, their potential for application on areas that range from optoelectronics to information storage has been progressively unraveled. Nevertheless, as technology steps forward, new challenges are arising. Here we consider what has been achieved and what are the current limitations on the fields of growth, characterization and modeling of silicon nanocrystals.

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“…Together with TEM, there are other useful techniques that can provide information regarding the structural properties of NCs. One of them is grazing incidence small X-ray scattering (GISAXS), which is a non-destructive technique for the structural characterization of NCs supported on a substrate [ 32 ] and NCs embedded in a matrix [ 33 ]. From the GISAXS analysis, it is possible to determine size, shape, inter-NC distance and size distribution of NCs.…”

Section: Reviewmentioning

confidence: 99%

Silicon and germanium nanocrystals: properties and characterization

Capan¹,

Carvalho²,

Coutinho³

2014

Beilstein J. Nanotechnol.

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SummaryGroup-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials.

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Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Cited by 7 publications

References 19 publications

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

An Outlook on Silicon Nanocrystals for Optoelectronics

Silicon and germanium nanocrystals: properties and characterization

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