Formation of Ge nanoclusters on Si(111)-7×7 surface at high temperature

Guo, Haiming; Wang, Yeliang; Liu, H.W; Ma, Haifeng; Qin, Z. H.; Gao, Hongjun

doi:10.1016/j.susc.2004.05.097

Cited by 13 publications

(6 citation statements)

References 16 publications

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“…Growth of Ge on Si surfaces has recently attracted much attention because of its importance both for semiconductor technology and for understanding scientific problems of growth (see, for example, [8,9]. Studies of Ge transport on Si surfaces could be important in solving of these problems.…”

Section: Introductionmentioning

confidence: 99%

Ge diffusion on Si surfaces

Dolbak

Olshanetsky

2006

Open Physics

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Section: Introductionmentioning

confidence: 99%

Ge diffusion on Si surfaces

Dolbak

Olshanetsky

2006

Open Physics

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“…To facilitate the formation of ordered Ge-based nanostructures on the Si(111)-7×7 surface, the substrate should be kept at temperature ranging from 100 to 300 ∘ C during deposition, since at temperatures lower than 100 ∘ C the physically deposited Ge atoms do not have enough mobility to span the dimer wall after arriving on the surface. [46][47][48] , are also shown. [49] With increasing coverage, isolated Ge nanoparticles with varying geometric configurations appear on the Si(111)-7×7 surface as shown in Fig.…”

Section: Ge/si(111)-7×7mentioning

confidence: 99%

“…5(c) and 5(d). [46,50] The intermixing of Ge/Si plays an important role in the epitaxial growth of these Ge islands. [55] 0.07 of the 2D nanostructure formed on Si (111) with a Ge coverage of 0.30 ML after annealing at 300 ∘ C. [52] Inset: the height profile along the dashed line indicated in (a).…”

Section: -3mentioning

confidence: 99%

“…Larger open circles and smaller ones are for the Si atoms in the first and second layers, respectively [52]. (c) and (d) STM images show typical Ge islands on the Si(111)-7×7 substrate formed upon direct deposition of Ge on Si(111) kept at 300 ∘ C. (c) 45 nm×45 nm, 2.0 V, 0.10 nA [46]. Two-dimensional Ge triangular epitaxial islands have the same orientation as the nearby Si(111)-7×7 reconstruction.…”

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confidence: 99%

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Controllable growth of low-dimensional nanostructures on well-defined surfaces

Qin¹

2013

Chinese Phys. B

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The controllable growth of nanostructures with desired geometric order and well-defined shapes has stimulated great interest due to its applicability in the development of microelectronic devices. Self-assembly is an efficient and versatile way to guide the atoms or molecules into low-dimensional nanostructures as a consequence of balancing complex interplay between adsorbate-adsorbate and adsorbate—substrate interfacial interactions. The tailoring of low-dimensional nanostructures by control of inter-adsorbate and adsorbate—substrate interfacial interactions is reviewed. Such inherent interactions greatly influence not only the size and shape of the growing nanostructures, but also their chemical identity. The degree of interaction between adsorbates can be controlled via preparation procedures, opening up the study of the influence of this phenomenon with respect to reactivity and catalytic behavior. The formation of well-defined molecular layers can be controlled not only by repulsive molecule-molecule interaction but also by symmetry matching or charge transfer between adsorbed molecules and the substrate. It has become obvious that inter-adsorbate and adsorbate—substrate interfacial interactions can be tuned to fabricate diverse surface nanostructures from semiconductor, metallic, and molecular materials.

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“…Then Germanium (99.9999% purity) was deposited onto the as-prepared Si(111)-7 × 7 surface by resistive evaporation. The substrate was kept above room temperature (ranging from 100 to 300 • C) to facilitate the formation of ordered structures since at room temperature, Ge atoms do not have enough mobility to span the dimer wall after arriving on the Si(111)-7 × 7 surface [59,61,68]. During evaporation, the system pressure was better than 5 × 10 −10 mbar.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Toward a Detailed Understanding of Si(111)‐7 × 7 Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Wang

Guo

Qin

et al. 2008

Journal of Nanomaterials

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Firstly, both the rest atoms and the adatoms of Si(111)-7×7surface are observed simultaneously by scanning tunneling microscopy (STM) when the sample bias voltages are kept less than − 0.7 V. The visibility of the rest atoms is rationalized by first-principle calculations and a very sharper tip can resolve them. Secondly, the behaviors of various Ge nanostructures fabricated on Si(111)-7×7, ranging from the initial adsorption sites of individual Ge atoms to the aggregation patterns of Ge nanoclusters, and then to 2D extended Ge islands, are comprehensively investigated by STM. The individual Ge atoms tend to substitute for Si adatoms at Si(111)-7×7with the preference of corner adatoms in the faulted half unit when keeping substrate at150∘C. With increasing Ge coverage, individual Ge atoms and Ge nanoclusters coexist on the substrate. Subsequently, the density of Ge nanoclusters increase and cluster-distribution becomes gradually regular with the formation of final 2D extended hexagonal configuration. When keeping the substrate at300∘C, Ge islands consisting of more complicated reconstructions with intermixing Ge/Si components are present on the substrate. The detail structural characterizations and the bonding nature of the observed Ge nanostructures are enunciated by the first-principle calculations.

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Formation of Ge nanoclusters on Si(111)-7×7 surface at high temperature

Cited by 13 publications

References 16 publications

Ge diffusion on Si surfaces

Ge diffusion on Si surfaces

Controllable growth of low-dimensional nanostructures on well-defined surfaces

Toward a Detailed Understanding of Si(111)‐7 × 7 Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

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