Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing

Mirzaei, Sahar; Kremer, Felipe; Sprouster, David; Araujo, Leandro; Feng, Ruixing; Glover, Christopher; Ridgway, Mark C

doi:10.1063/1.4933396

Cited by 7 publications

(6 citation statements)

References 36 publications

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“…Furthermore, the NP spectra show evidence of a combination of amorphous and crystalline environments. This combination of crystalline and amorphous environments is consistent with previous studies 25,26 where the formation of an amorphous surface layer separating the crystalline NP core was observed in embedded Ge NPs. Finally, no evidence of Ge nitride formation was apparent from the XANES analysis.…”

Section: Resultssupporting

confidence: 92%

Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Mirzaei

Kremer

Feng

et al. 2017

Journal of Applied Physics

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SiGe nanoparticles were formed in an amorphous Si 3 N 4 matrix by Ge þ ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. Nanoparticles were observed for excess Ge concentrations in the range from 9 to 12 at. % after annealing at temperatures in the range from 700 to 900 C. The average nanoparticle size increased with excess Ge concentration and annealing temperature and varied from an average diameter of 1.8 6 0.2 nm for the lowest concentration and annealing temperature to 3.2 6 0.5 nm for the highest concentration and annealing temperature. Our study demonstrates that the structural properties of embedded SiGe nanoparticles in amorphous Si 3 N 4 are sensitive to the implantation and post implantation conditions. Furthermore, we demonstrate that ion implantation is a novel pathway to fabricate and control the SiGe nanoparticle structure and potentially useful for future optoelectronic device applications. Published by AIP Publishing.

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Section: Resultssupporting

confidence: 92%

Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Mirzaei

Kremer

Feng

et al. 2017

Journal of Applied Physics

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“…In the initial step (a), an intrinsic silicon wafer has been taken using the epitaxial growth process. Step (b) uses masking and deposition of germanium (Ge) in the source region by the use of an ion implantation technique 39 . In step (c), the atomic layer deposition technique deposited a high‐k HfO 2 oxide layer in the top and bottom regions 40 .…”

Section: Simulator Calibration and Modelingmentioning

confidence: 99%

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

Dash,

Panda

2024

Int J Numerical Modelling

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This study presents a new dual‐metal dopingless tunnel field effect transistor with a Germanium source (GeS‐DM‐DLT) for label‐free biomolecule detection. Introducing a Ge source and dual‐metal gate provides improved drain current. We have considered an L‐shaped cavity at the top and bottom source metal region for investigating the sensitivity. The biosensor's sensitivity has been measured using the neutral biomolecules' dielectric constants (varying the k‐values in the cavity). The sensor's DC performance is investigated using transfer characteristics, BTBT rate, energy band, and electric field variation for different k‐values. The sensitivity performance of the proposed biosensor is evaluated in terms of different DC parameters (drain current, surface potential, subthreshold swing, interband tunneling rate, electric field) and RF parameters (parasitic capacitance, transconductance, cut‐off frequency, maximum frequency). The suggested biosensor offers a much‐improved SON of 9.86 × 108 and SRATIO of 1.94 × 104 for a dielectric constant of 22.0 at room temperature. Further research has been done to study the effects of dielectric materials, interface trap carriers (ITC), and temperature on drain current, drain current sensitivity, and other sensitivity parameters. The article also includes investigating the influence of the fill factor on sensitivity performance. The GeS‐DM‐DLT sensor performs best in fully‐filled conditions compared to the partially‐filled condition inside the cavity region.

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“…Это может быть обусловлено присутстви-ем в нанокристаллах деформации сжатия. В работе [6] нанокристаллы Ge с такими размерами наблюдались в ионно-имплантированном оксинитриде кремния уже после отжига при температуре 1000−1100 • C. Одна-ко уровни пересыщения пленки атомами германия в этом случае составляли 9−12 ат%. Кроме этого, по стехиометрическому составу пленки оксинитрида крем-ния в работе [6] были ближе к оксиду кремния, чем к нитриду кремния.…”

Section: ие тысченко гк кривякин ва володинunclassified

“…В работе [6] нанокристаллы Ge с такими размерами наблюдались в ионно-имплантированном оксинитриде кремния уже после отжига при температуре 1000−1100 • C. Одна-ко уровни пересыщения пленки атомами германия в этом случае составляли 9−12 ат%. Кроме этого, по стехиометрическому составу пленки оксинитрида крем-ния в работе [6] были ближе к оксиду кремния, чем к нитриду кремния. Если принять во внимание диффузионно-контролируемый механизм зарождения и роста нанокристаллов [5], то при использованных нами уровнях пересыщения максимально возможные размеры нанокристаллов после отжига при температуре 1000 • C должны составлять 2.0−2.5 нм.…”

Section: ие тысченко гк кривякин ва володинunclassified

“…Ранее было показано, что рост нанокристаллов германия в SiO 2 подчиняется диффузионному механизму [5]. Однако в оксинитриде кремния коэффициенты диффузии многих примесей, в том числе и германия, много меньше, чем в SiO 2 [6]. Это накладывает некоторые ограничения на процесс ионно-лучевого синтеза в SiO x N y .…”

Section: Introductionunclassified

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Ионный синтез кристаллической фазы Ge в пленках SiO-=SUB=-x-=/SUB=-N-=SUB=-y-=/SUB=- при отжиге под высоким давлением

Tyschenko¹,

Кривякин²,

Володин³

2018

Физика И Техника Полупроводников

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The nucleation of the crystalline Ge phase in SiO_ x N_ y films implanted with Ge^+ ions with the energy 55 keV to doses of 2.1 × 10^15–1.7 × 10^16 cm^–2 and then annealed at a temperature of T _a = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.

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Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing

Cited by 7 publications

References 36 publications

Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

Ионный синтез кристаллической фазы Ge в пленках SiO-=SUB=-x-=/SUB=-N-=SUB=-y-=/SUB=- при отжиге под высоким давлением

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