Formation of Ge0 and GeO  nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Zatsepin, A. F.; Zatsepin, D. A.; Kurmaev, E.Z.; Fitting, H.‐J.; Schmidt, Bertram; Mikhailovich, A. P.; Ławniczak-Jabłońska, K.

doi:10.1016/j.apsusc.2015.05.090

Cited by 8 publications

(4 citation statements)

References 28 publications

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“…On the first look the appearance of Cu 0 means Cu-losses from the ion-beam stimulated synthesis and modulation of Cx-TiO 2 microstructure (this effect was established earlier by the other researchers even for amorphous hosts [59,60] and in our previous findings [61,62]), but, what might be really interesting in our humble opinion, it is accompanied by embedded metal treating of oxygen vacancies (see, for instance, Ref. [63,64]), and this occurred one more time with the current samples even under sequential and relatively soft (regarding applied mode) ion-beam stimulated synthesis.…”

Section: Resultsmentioning

confidence: 71%

Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies

Zatsepin

Boukhvalov

Kurmaev

et al. 2017

Solid State Sciences

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The over threshold carbon-loadings (~ 50 at.%) of initial TiO 2 -hosts and posterior Cu-sensitization (~ 7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 hour vacuumidle cycle between sequential stages of embedding. The final Cx-TiO 2 :Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band mappings. The results obtained were discussed on the theoretic background employing DFT-calculations. The combined XPS-and-DFT analysis allows to establish and prove the final formula of the synthesized samples as Cx-

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Section: Resultsmentioning

confidence: 71%

Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies

Zatsepin

Boukhvalov

Kurmaev

et al. 2017

Solid State Sciences

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“…c) of the strongly doped film, a well‐defined, symmetric peak was identified at 31.9 eV. According to Refs, binding energy of 31.8 eV is attributed to GeO (II) type species. Therefore, the oxidation state of the Ge atoms in the VO x :Ge 50 W film is thought to be predominantly 2+.The small and broad core‐line structure in the weakly doped film's spectrum might indicate the presence of Ge atoms in multiple oxidation states.…”

Section: Discussionmentioning

confidence: 87%

In situ photoelectron spectroscopic characterization of reactively sputtered, doped vanadium oxide thin films

Krammer

Gremaud

Bouvard

et al. 2016

Surface & Interface Analysis

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Thin films of pure vanadium oxide (VOx) and Ge doped vanadium oxide (VOx:Ge) have been deposited by reactive magnetron sputtering on Si (100) substrates. These films were characterized by means of in situ X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy to address the doping induced changes in the core‐level and valence‐band spectra of the material. Doped films exhibit a decrease in the density of states at the Fermi level, indicating the insulating character of said films compared with the undoped ones. Doped vanadium dioxide is a promising candidate for switchable absorber coatings for solar thermal collectors. Copyright © 2016 John Wiley & Sons, Ltd.

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“…Figure a gives the Ge 3d XPS spectra of 20T20A, 20T25A, and 20T30A. Three peaks with binding energies at ∼29, ∼31.6, and ∼32.5 eV were observed in Ge 3d spectra, corresponding to Ge 0 , Ge 2+ , and Ge 4+ , respectively. , The calculated valence states of Ge ions are 3.07, 2.84, and 2.51 in 20T20A, 20T25A, and 20T30A, respectively. Through the quantitative analysis of these peaks, Ge ions have the tendency to change from the high valence state to the low valence state with the increase of Al 2 O 3 , as shown in Figure c.…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, Ge ions may behave as zero valent, divalent, or tetravalent ions in the glass which will greatly influence the Tb ion state. 30 Therefore, the valence state in MO glass is mainly discussed.…”

Section: Valance States Of Tb Andmentioning

confidence: 99%

High Verdet Constant Glass for Magnetic Field Sensors

Zhao

Xia

et al. 2022

ACS Appl. Mater. Interfaces

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Due to the high transparency, high Verdet constant, as well as easy processing properties, rare-earth ion-doped glasses have demonstrated great potential in magneto-optical (MO) applications. However, the variation in the valence state of rare-earth ions (Tb 3+ to Tb 4+ ) resulted in the decreased effective concentration of the paramagnetic ions and thus degraded MO performance. Here, a strategy was proposed to inhibit the oxidation of Tb 3+ into Tb 4+ as well as improve the thermal stability by tuning the optical basicity of glass networks. Moreover, the depolymerization of the glass network was modulated to accommodate more Tb ions. Thus, a record high effective concentration (14.19 × 10 21 / cm 3 ) of Tb ions in glass was achieved, generating a high Verdet constant of 113 rad/(T•m) at 650 nm. Lastly, the first application of MO glass for magnetic field sensors was demonstrated, achieving a sensitivity of 0.139 rad/T. We hope our work provides guidance for the fabrication of MO glass with high performance and thermal stability and could push MO glass one step further for magnetic sensing applications.

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Formation of Ge0 and GeO nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Cited by 8 publications

References 28 publications

Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies

Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies

In situ photoelectron spectroscopic characterization of reactively sputtered, doped vanadium oxide thin films

High Verdet Constant Glass for Magnetic Field Sensors

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