1996
DOI: 10.1016/0168-583x(96)01518-2
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Formation of H− on thin aluminum films

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Cited by 15 publications
(3 citation statements)
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“…175 Aluminum was chosen as the material to study the formation of H À ions by scattering from a thin film to investigate the quantization effect along the direction of the surface normal. 176 More recently, survival of H À ions near the cluster surface of Al was studied to investigate the quantum-size effect. 177 The formulation was also given for grazing angle scattering onto a spherical Al cluster.…”
Section: B Theoretical Work On H 2 Surface Productionmentioning
confidence: 99%
“…175 Aluminum was chosen as the material to study the formation of H À ions by scattering from a thin film to investigate the quantization effect along the direction of the surface normal. 176 More recently, survival of H À ions near the cluster surface of Al was studied to investigate the quantum-size effect. 177 The formulation was also given for grazing angle scattering onto a spherical Al cluster.…”
Section: B Theoretical Work On H 2 Surface Productionmentioning
confidence: 99%
“…With increase of the film thicknesş the widths (D) converge towards the results for the semi-infinite metal. We observe no step structures in the dependence of the width on the distance D. Those structures, observed for the width of H\-ion in front of the Al-films [26], are due to the crossings of discrete energies E L by E ? (D) (it corresponds to the opening/closing of the k "" continuum associated with E L ).…”
Section: Resultsmentioning
confidence: 80%
“…Electron transfer is qualitatively different for systems with finite size. 3,4 The blocking of electron propagation along the surface normal, which is the preferential direction for tunneling, should have the biggest effect on the RCT. One can mention the recent studies of the effect of the projected band gap along the surface normal for the ͑111͒ surfaces of noble metals.…”
Section: Introductionmentioning
confidence: 99%