Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE)

Venkatasamy, Venkatram; Jayaraju, N.

doi:10.1149/1.2357200

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…The Stickney group has been working on the electrodeposition of semiconductors for the better of two decades, and has led the development of electrochemical of atomic layer deposition (E-ALD) [18][19][20][21][22][23][24][25] .…”

Section: Introductionmentioning

confidence: 99%

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

Shen

Zhang

Mubeen

et al. 2019

Electrochimica Acta

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Cadmium sulfide (CdS) is a preferred heterojunction partner for a number of chalcogenide-based solar cells. In view of this, interest has grown in the use of solution-based deposition techniques as an alternative route for the preparation of uniform ultrathin films of CdS. However, the quality of the electrodeposited CdS films on indium-tin oxide (ITO) remains far from optimal. This is because the ITO surface is electrochemically heterogeneous due to the presence of indium oxide; nucleation and further electrodeposition of CdS does not transpire on the oxided sites. Hence, only coarse-grained coatings, instead of homogeneous ultrathin films, are generated at un-pretreated ITO surfaces. In the present study, a mitigation of the amount of interfacial In oxide was attempted in order to increase the nucleation-site (indium-metal site) density. The procedure consisted of two steps: (i) Mild electrochemical reduction of the ITO to convert surface In(III) to In(0), followed by (ii) surface-limited redox replacement (SLRR) of In(0) by Cu via an aqueous solution of Cu 2+. This procedure resulted in the formation of a high density of oxide-free Cu on which CdS nuclei would form; the thickness was such that optical transparency was largely undiminished. A tenfold increase in CdS site density was observed, and that permitted the epitaxial growth of a second semiconductor, CdTe, atop the CdS film. The influences of applied potential and deposition time on nucleation-site sizes and densities were also studied.

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Section: Introductionmentioning

confidence: 99%

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

Shen

Zhang

Mubeen

et al. 2019

Electrochimica Acta

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Internal cooling efficiency of a junction diode

Yamashita¹

2011

Appl. Phys. A

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Broadband long-wave infrared high-absorption of active materials through hybrid plasmonic resonance modes

et al. 2023

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Broadband high absorption of long-wavelength infrared light for rough submicron active material films is quite challenging to achieve. Unlike conventional infrared detection units, with over three-layer complex structures, a three-layer metamaterial with mercury cadmium telluride (MCT) film sandwiched between an Au cuboid array and Au mirror is studied through theory and simulations. The results show that propagated/localized surface plasmon resonance simultaneously contribute to broadband absorption under the TM wave of the absorber, while the Fabry–Perot (FP) cavity resonance causes absorption of the TE wave. As surface plasmon resonance concentrates most of the TM wave on the MCT film, 74% of the incident light energy is absorbed by the submicron thickness MCT film within the 8–12 μm waveband, which is approximately 10 times than that of the rough same thickness MCT film. In addition, by replacing the Au mirror with Au grating, the FP cavity along the y-axis direction was destroyed, and the absorber exhibited excellent polarization-sensitive and incident angle-insensitive properties. For the corresponding conceived metamaterial photodetector, as carrier transit time across the gap between Au cuboid is much less than that of other paths, the Au cuboids simultaneously act as microelectrodes to collect photocarriers generated in the gap. Thus the light absorption and photocarrier collection efficiency are hopefully improved simultaneously. Finally, the density of the Au cuboids is increased by adding the same arranged cuboids perpendicular to the original direction on the top surface or by replacing the cuboids with crisscross, which results in broadband polarization-insensitive high absorption by the absorber.

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Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE)

Cited by 3 publications

References 34 publications

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

Internal cooling efficiency of a junction diode

Broadband long-wave infrared high-absorption of active materials through hybrid plasmonic resonance modes

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